METHOD OF FABRICATING A THIN-FILM DEVICE
First Claim
1. A method of fabricating a thin-film device, including:
- forming an oxide-semiconductor film on a first electrical insulator;
forming a second electrical insulator on said oxide-semiconductor film,said oxide-semiconductor film defining an active layer,said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulating insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers; and
oxidizing said oxide-semiconductor film to render a density of oxygen holes in at least one of said first and second interlayer layers smaller than a density of oxygen holes in said bulk layer.
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Abstract
A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
80 Citations
36 Claims
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1. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulating insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers; and oxidizing said oxide-semiconductor film to render a density of oxygen holes in at least one of said first and second interlayer layers smaller than a density of oxygen holes in said bulk layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; and forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulating insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers, a density of oxygen holes in at least one of said first and second interlayer layers being smaller than a density of oxygen holes in said bulk layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of fabricating a thin-film device, including:
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forming an oxide-semiconductor film on a first electrical insulator; forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being formed by repeatedly carrying out formation of an oxide-semiconductor film and oxidation to said oxide-semiconductor film; and oxidizing said oxide-semiconductor film to render a density of oxygen holes in at least one of said first and second interlayer layers smaller than a density of oxygen holes in said bulk layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification