METHOD, APPARATUS AND PROGRAM FOR MANUFACTURING SILICON STRUCTURE
First Claim
1. A method for manufacturing a silicon structure, the method comprising, in a process of etching a silicon region in a substrate provided with an etch stop layer with use of plasmas generated by alternately supplying an etching gas and an organic deposit forming gas, the steps of:
- etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer,subsequently etching under a transition etching condition in which an etching rate is decreased with time-dependently from the highest etching rate in the high-rate etching condition; and
thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
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Accused Products
Abstract
A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
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Citations
6 Claims
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1. A method for manufacturing a silicon structure, the method comprising, in a process of etching a silicon region in a substrate provided with an etch stop layer with use of plasmas generated by alternately supplying an etching gas and an organic deposit forming gas, the steps of:
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etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer, subsequently etching under a transition etching condition in which an etching rate is decreased with time-dependently from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition. - View Dependent Claims (2)
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3. A program for manufacturing a silicon structure, the program comprising, in a process of etching a silicon region in a substrate provided with an etch stop layer with use of plasmas generated by alternately supplying an etching gas and an organic deposit forming gas, the steps of:
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etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition. - View Dependent Claims (4, 5, 6)
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Specification