PARALLEL SYSTEM FOR EPITAXIAL CHEMICAL VAPOR DEPOSITION

• US 20110100554A1
• Filed: 09/07/2010
• Published: 05/05/2011
• Est. Priority Date: 09/09/2009
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: SANCHEZ, ERROL ANTONIO C., CARLSON, DAVID K., DINIZ, HERMAN P.
• Application Number:
  US12/876,563
• Publication Number:
  US 20110100554A1
• Time in Patent Office: Days
• US Class Current: 156/345.29
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.

Claims

1. A parallel system for epitaxial deposition, comprising:

a first body having a first process chamber and a second process chamber disposed within the first body;

a shared gas injection system coupled to each of the first and the second process chambers; and

a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber.

2. The system of claim 1, wherein the gas injection system provides independent control of the flow rate of a gas entering each process chamber.

3. The system of claim 1, wherein the first body further comprises a thermal epoxy surrounding the first and the second process chambers.

4. The system of claim 1, wherein each process chamber further comprises a chamber body formed of stainless steel tubing.

5. The system of claim 4, wherein an inner surface of each chamber body is lined with quartz.

6. The system of claim 1, wherein each process chamber further comprises a heating system to provide energy to an interior of each process chamber.

7. The system of claim 6, wherein each heating system is disposed only above each process chamber, or wherein each heating system is disposed only below each process chamber.

8. The system of claim 1, wherein the exhaust system further comprises:

an exhaust pump coupled to the first and second process chambers;

a first ballast system coupled to the first process chamber to independently control exhaust pressure from the first process chamber; and

a second ballast system coupled to the second process chamber to independently control exhaust pressure from the second process chamber.

9. The system of claim 8, further comprising:

a pressure control valve disposed between the exhaust pump and the first and second process chambers.

10. The system of claim 9, wherein the exhaust system further comprises:

a first isolation valve disposed between the first process chamber and the exhaust pump; and

a second isolation valve disposed between the second process chamber and the exhaust pump.

11. The system of claim 8, wherein the first ballast system further comprises:

a first ballast supply coupled to the first process chamber via a first mass flow controller to provide a ballast gas to adjust the pressure in the first process chamber; and

a first pressure transducer to monitor the pressure of the first chamber.

12. The system of claim 11, wherein the second ballast system further comprises:

a second ballast supply coupled to the second process chamber via a second mass flow controller to provide a ballast gas to adjust the pressure in the second process chamber; and

a second pressure transducer to monitor the pressure of the second chamber.

13. The system of claim 1, wherein the gas injection system further comprises:

a deposition system coupled to the first and second process chambers;

an etch system coupled to the first and second process chambers; and

a vent system coupled to the deposition system and the etch system to selectively vent gases from each of the etch and deposition systems.

14. The system of claim 13, wherein the deposition system further comprises:

a deposition manifold to provide a deposition gas;

a first deposition flow controller disposed between the deposition manifold and the first process chamber to independently control the flow rate of the deposition gas entering the first process chamber; and

a second deposition flow controller disposed between the deposition manifold and the second process chamber to independently control the flow rate of the deposition gas entering the second process chamber.

15. The system of claim 14, wherein the composition of a deposition gas supplied from the deposition manifold to each process chamber is fixed.

16. The system of claim 14, wherein the etch system further comprises:

a etch manifold to provide an etch gas;

a first etch flow controller disposed between the etch manifold and the first process chamber to independently control the flow rate of the etch gas entering the first process chamber; and

a second etch flow controller disposed between the etch manifold and the second process chamber to independently control the flow rate of the etch gas entering the second process chamber.

17. The system of claim 16, wherein the composition of an etch gas supplied from the etch manifold to each process chamber is fixed.

18. The system of claim 16, wherein the vent system further comprises:

a vent manifold to vent gases from the etch and deposition systems;

a first backpressure regulator disposed between the vent manifold and the deposition manifold to selectively permit gases from the deposition system to enter the vent system; and

a second backpressure regulator disposed between the vent manifold and the etch manifold to selectively permit gases from the etch system to enter the vent system.

19. The system of claim 16, further comprising:

an inlet assembly disposed within the first body, wherein the inlet assembly is coupled to the deposition system between the deposition manifold and the first and second deposition flow controllers and coupled to the etch system between the etch manifold and the first and second etch flow controllers.

20. The system of claim 19, wherein the inlet assembly further comprises:

a window to provide energy to a gas flowing through the inlet assembly prior to entering each process chamber.