LIGHT-EMITTING DEVICE AND FABRICATING METHOD THEREOF

• US 20110101304A1
• Filed: 04/16/2009
• Published: 05/05/2011
• Est. Priority Date: 04/16/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O
• Granted Patent: US 8,502,193 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer over the support substrate, a second electrode layer, which includes a current blocking layer and a reflective current spreading layer, over the wafer bonding layer, a current injection layer over the second electrode layer, a superlattice structure layer over the current injection layer, a second conductive semiconductor layer over the superlattice structure layer, an active layer over the second conductive semiconductor layer, a first conductive semiconductor layer over the active layer, and a first electrode layer over the first conductive semiconductor layer.

Claims

1. A light emitting device comprising:

a support substrate;

a wafer bonding layer over the support substrate;

a second electrode layer including a current blocking layer and a reflective current spreading layer over the wafer bonding layer;

a current injection layer over the second electrode layer;

a superlattice structure layer over the current injection layer;

a second conductive semiconductor layer over the superlattice structure layer;

an active layer over the second conductive semiconductor layer;

a first conductive semiconductor layer over the active layer; and

a first electrode layer over the first conductive semiconductor layer.

2. The light emitting device of claim 1, further comprising a diffusion barrier layer between the wafer bonding layer and the second electrode layer.

3. The light emitting device of claim 1, further comprising a first ohmic contact electrode layer between the first conductive semiconductor layer and the first electrode layer.

4. The light emitting device of claim 1, further comprising a second ohmic contact electrode layer under the support substrate.

5. The light emitting device of claim 1, wherein the first electrode layer vertically overlaps with the current blocking layer.

6. The light emitting device of claim 1, wherein the wafer bonding layer includes at least one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, and metallic silicide.

7. The light emitting device of claim 2, wherein the diffusion barrier layer includes at least one selected from the group consisting of Pt, Pd, Cu, Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, and metallic silicide.

8. The light emitting device of claim 1, wherein the current blocking layer includes a thin film layer forming a schottky contact interface with respect to an electrical insulating thin film layer or the current injection layer.

9. The light emitting device of claim 8, wherein the current blocking layer includes one selected from the group consisting of SiN_X, SiO₂, Al₂O₃, Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metallic silicide.

10. The light emitting device of claim 1, wherein the current injection layer includes a conductive thin film including a nitride or a carbon nitride including group II, III, or IV elements.

11. The light emitting device of claim 1, wherein the superlattice structure layer includes at least one selected from the group consisting of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, and SiN.

12. The light emitting device of claim 3, wherein the first ohmic contact electrode layer includes at least one selected from the group consisting of TiN, TiO, ITO, ZnO, RuO₂, IrO₂, In₂O₃, SnO₂, ZnGaO, InZnO, ZnInO, and Ni—

O—

Au.

13. A light emitting device comprising:

a support substrate;

a wafer bonding layer over the support substrate;

a current blocking layer partially formed over the wafer bonding layer;

a reflective current spreading layer over the wafer bonding layer and the current blocking layer;

a current injection layer provided over a top surface and a lateral surface of the reflective current spreading layer;

a superlattice structure layer over a top surface and a lateral surface of the current injection layer;

a second conductive semiconductor layer over the superlattice structure layer and the reflective current spreading layer;

an active layer over the second conductive semiconductor layer;

a first conductive semiconductor layer over the active layer; and

a first electrode layer over the first conductive semiconductor layer.

14. The light emitting device of claim 13, further comprising a diffusion barrier layer between the wafer bonding layer and the reflective current spreading layer, wherein the diffusion barrier layer is provided at a lateral surface of the current blocking layer.

15. The light emitting device of claim 13, wherein the reflective current spreading layer makes contact with a top surface and a lateral surface of the current blocking layer.

16. The light emitting device of claim 13, wherein the reflective current spreading layer forms a schottky contact interface with respect to the second conductive semiconductor layer.

17. The light emitting device of claim 13, wherein the current injection layer includes a conductive thin film including a nitride or a carbon nitride including group II, III, or IV elements.

18. The light emitting device of claim 13, wherein the superlattice structure layer includes at least one selected from the group consisting of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN, MgN, ZnN, and SiN.