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SEMICONDUCTOR DEVICE

  • US 20110101331A1
  • Filed: 10/14/2010
  • Published: 05/05/2011
  • Est. Priority Date: 10/30/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising an EDMOS circuit comprising:

  • a first insulating layer over a semiconductor substrate;

    a conductive layer over the first insulating layer;

    a second insulating layer over the conductive layer;

    an oxide semiconductor layer over the second insulating layer, in which a hydrogen concentration is lower than or equal to 5×

    1019 atoms/cm3 and a carrier concentration is lower than or equal to 5×

    1014/cm3;

    a source and drain electrode layers over the oxide semiconductor layer;

    a gate insulating layer over the oxide semiconductor layer and the source and drain electrode layers; and

    a gate electrode layer over the gate insulating layer,wherein the conductive layer overlaps with the oxide semiconductor layer with the second insulating layer provided therebetween.

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