SEMICONDUCTOR DEVICE

• US 20110101333A1
• Filed: 10/26/2010
• Published: 05/05/2011
• Est. Priority Date: 10/30/2009
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SHIONOIRI, Yutaka, NODA, Kosei
• Application Number:
  US12/912,083
• Publication Number:
  US 20110101333A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO

Abstract

An object is to provide a semiconductor device with reduced standby power. A transistor including an oxide semiconductor as an active layer is used as a switching element, and supply of a power supply voltage to a circuit in an integrated circuit is controlled by the switching element. Specifically, when the circuit is in an operation state, supply of the power supply voltage to the circuit is performed by the switching element, and when the circuit is in a stop state, supply of the power supply voltage to the circuit is stopped by the switching element. In addition, the circuit supplied with the power supply voltage includes a semiconductor element which is a minimum unit included in an integrated circuit formed using a semiconductor. Further, the semiconductor included in the semiconductor element contains silicon having crystallinity (crystalline silicon).

Claims

1. A semiconductor device comprising:

a circuit including a first transistor; and

a second transistor configured to control supply of a power supply voltage to the circuit,

wherein a channel formation region of the first transistor includes silicon having crystallinity, and

wherein a channel formation region of the second transistor includes an oxide semiconductor.

2. The semiconductor device according to claim 1, wherein the silicon having crystallinity is microcrystalline silicon, polycrystalline silicon, or single crystal silicon.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor includes indium, gallium, and zinc.

4. The semiconductor device according to claim 1,

wherein the channel formation region of the first transistor is formed in a first semiconductor film,

wherein the channel formation region of the second transistor is formed in a second semiconductor film, and

wherein the first semiconductor film and the second semiconductor film are formed on different insulating surfaces.

5. A semiconductor device comprising:

a circuit including a first transistor;

a second transistor configured to control supply of a power supply voltage to the circuit; and

a control circuit including a third transistor and configured to control supply of a clock signal to the circuit,

wherein a channel formation region of the first transistor includes silicon having crystallinity, and

wherein each of a channel formation region of the second transistor and a channel formation region of the third transistor include an oxide semiconductor.

6. The semiconductor device according to claim 5, wherein the silicon having crystallinity is microcrystalline silicon, polycrystalline silicon, or single crystal silicon.

7. The semiconductor device according to claim 5, wherein the oxide semiconductor includes indium, gallium, and zinc.

8. The semiconductor device according to claim 5,

wherein the channel formation region of the first transistor is formed in a first semiconductor film,

wherein the channel formation region of the second transistor is formed in a second semiconductor film, and

wherein the first semiconductor film and the second semiconductor film are formed on different insulating surfaces.