NON-LINEAR ELEMENT, DISPLAY DEVICE INCLUDING NON-LINEAR ELEMENT, AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE
First Claim
1. A non-linear element comprising:
- a first electrode formed over a substrate;
an oxide semiconductor layer formed on and in contact with the first electrode, in which a hydrogen concentration is less than or equal to 5×
1019/cm3; and
a second electrode formed on and in contact with the oxide semiconductor layer,wherein a work function φ
ma of the first electrode, electron affinity χ
of the oxide semiconductor layer, and a work function φ
mc of the second electrode satisfy φ
mc≦
χ
<
φ
ma.
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Accused Products
Abstract
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
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Citations
35 Claims
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1. A non-linear element comprising:
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a first electrode formed over a substrate; an oxide semiconductor layer formed on and in contact with the first electrode, in which a hydrogen concentration is less than or equal to 5×
1019/cm3; anda second electrode formed on and in contact with the oxide semiconductor layer, wherein a work function φ
ma of the first electrode, electron affinity χ
of the oxide semiconductor layer, and a work function φ
mc of the second electrode satisfy φ
mc≦
χ
<
φ
ma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A non-linear element comprising:
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a first electrode formed over a substrate; an oxide semiconductor layer formed on and in contact with the first electrode, in which a hydrogen concentration is less than or equal to 5×
1019/cm3;a second electrode formed on and in contact with the oxide semiconductor layer; an insulating film covering the first electrode, the oxide semiconductor layer, and the second electrode; and a plurality of third electrodes formed in contact with the insulating film, wherein a work function φ
md of the first electrode, electron affinity χ
of the oxide semiconductor layer, and a work function φ
ms of the second electrode satisfy φ
ms≦
χ
<
φ
md. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A non-linear element comprising:
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a first electrode formed over a substrate; an oxide semiconductor layer formed on and in contact with the first electrode, in which a hydrogen concentration is less than or equal to 5×
1019/cm3;a second electrode formed on and in contact with the oxide semiconductor layer; an insulating film covering the first electrode, the oxide semiconductor layer, and the second electrode; and a plurality of third electrodes formed in contact with the insulating film, wherein the plurality of third electrodes is adjacent to a side surface of the oxide semiconductor layer with the insulating film interposed therebetween, wherein the plurality of third electrodes is electrically connected to the first electrode, and wherein a work function φ
md of the first electrode, electron affinity χ
of the oxide semiconductor layer, and a work function φ
ms of the second electrode satisfy φ
ms≦
χ
<
φ
md. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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27. A non-linear element comprising:
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a first electrode formed over a substrate; an oxide semiconductor layer formed on and in contact with the first electrode, in which a hydrogen concentration is less than or equal to 5×
1019/cm3;a second electrode formed on and in contact with the oxide semiconductor layer; an insulating film covering the first electrode, the oxide semiconductor layer, and the second electrode; and a plurality of third electrodes formed in contact with the insulating film, wherein the plurality of third electrodes is adjacent to a side surface of the oxide semiconductor film with the insulating film interposed therebetween, wherein the plurality of third electrodes is electrically connected to the second electrode, and wherein a work function φ
md of the first electrode, electron affinity χ
of the oxide semiconductor layer, and a work function φ
ms of the second electrode satisfy φ
ms≦
χ
<
φ
md. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35)
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Specification