LIGHT EMITTING DEVICE INCLUDING SECOND CONDUCTIVE TYPE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE

• US 20110101340A1
• Filed: 11/01/2010
• Published: 05/05/2011
• Est. Priority Date: 11/02/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: SON, Hyo Kun
• Granted Patent: US 8,698,125 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Provided is a light emitting device, which includes a first conductive type semiconductor layer, an active layer, a roughness pattern, and a second conductive type semiconductor layer. The active layer is disposed on the first conductive type semiconductor layer. The roughness pattern is disposed on the active layer. The second conductive type semiconductor layer is disposed on the roughness pattern and the active layer, and includes a metal oxide.

Claims

1. A light emitting device comprising:

a first conductive type semiconductor layer;

an active layer on the first conductive type semiconductor layer;

a roughness pattern on the active layer; and

a second conductive type semiconductor layer on the roughness pattern and the active layer, the second conductive type semiconductor layer including a metal oxide.

2. The light emitting device according to claim 1, wherein the metal oxide is formed of a zinc oxide (ZnO).

3. The light emitting device according to claim 1, wherein the second conductive type semiconductor layer comprises a p type dopant including at least one of magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and cadmium (Cd).

4. The light emitting device according to claim 1, wherein the second conductive type semiconductor layer comprises a concave-convex pattern.

5. The light emitting device according to claim 1, wherein the roughness pattern has a composition formula of In_xAl_yGa_1-x-yN, where 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1.

6. The light emitting device according to claim 5, wherein the roughness pattern comprises a p type dopant including at least one of magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and cadmium (Cd).

7. The light emitting device according to claim 1, wherein the active layer is formed by stacking a barrier layer and a well layer.

8. The light emitting device according to claim 7, wherein the barrier layer is provided in plurality,

the active layer comprises the barrier layers, and

a first barrier layer having a thickness ranging from about 150% to about 250% of a thickness of the other barrier layers is disposed on an uppermost part of the barrier layers.

9. The light emitting device according to claim 8, wherein an upper portion of the first barrier layer comprises a p type dopant including at least one of magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and cadmium (Cd).

10. The light emitting device according to claim 9, wherein the upper portion of the first barrier layer including the p type dopant has a thickness ranging from about 20% to about 30% of an entire thickness of the first barrier layer.

11. The light emitting device according to claim 1, wherein an electrode is disposed on the second conductive type semiconductor layer.

12. The light emitting device according to claim 1, further comprising a conductive support member on the second conductive type semiconductor layer.

13. The light emitting device according to claim 12, further comprising a reflective layer between the conductive support member and the second conductive type semiconductor layer.

14. A light emitting device package comprising:

a body having a cavity;

a plurality of electrodes exposed within the cavity and separated from each other;

a light emitting device within the cavity, the light emitting device being connected to the electrode; and

a resin filling the cavity,

wherein the light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a roughness pattern on the active layer, and a second conductive type semiconductor layer on the roughness pattern and the active layer, the second conductive type semiconductor layer including a metal oxide.

15. The light emitting device package according to claim 14, wherein the metal oxide is formed of a zinc oxide (ZnO).

16. The light emitting device package according to claim 14, wherein the roughness pattern is a concave-convex pattern having a composition formula of In_xAl_yGa_1-x-yN, where 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1.

17. The light emitting device package according to claim 14, wherein the metal oxide and the roughness pattern comprise a p type dopant including at least one of magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), and cadmium (Cd).

18. A lighting system comprising:

a substrate; and

a light emitting module including a light emitting device on the substrate,

wherein the light emitting device includes;

a first conductive type semiconductor layer;

an active layer on the first conductive type semiconductor layer;

a roughness pattern on the active layer; and

a second conductive type semiconductor layer on the roughness pattern and the active layer, the second conductive type semiconductor layer including a metal oxide.