ZnO based semiconductor devices and methods of manufacturing the same

• US 20110101342A1
• Filed: 01/14/2011
• Published: 05/05/2011
• Est. Priority Date: 04/17/2006
• Status: Active Grant

• Current Assignee: Chang-Jung Kim, Dong-Hun Kang, I-Hun Song, Young-Soo Park
• Original Assignee: Chang-Jung Kim, Dong-Hun Kang, I-Hun Song, Young-Soo Park
• Inventors: Song, I-hun, Park, Young-soo, Kang, Dong-hun, Kim, Chang-jung
• Granted Patent: US 8,735,882 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device may include a composite represented by Formula 1 below as an active layer.

x(Ga₂O₃).y(In₂O₃).z(ZnO)  Formula 1

• • wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70.

Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Claims

1. A semiconductor device comprising:

a substrate;

an active layer including a composite represented by Formula 1 below, on the substrate;

source and drain electrodes electrically connected to the active layer;

a gate electrode on the active layer; and

a gate insulating layer between the gate electrode and the active layer;

x(Ga₂O₃).y(In₂O₃).z(ZnO) 

 

Formula 1

wherein, about 0.75≦

x/z≦

about 3.15, and about 0.55≦

y/z≦

about 1.70.

2. The semiconductor device of claim 1, wherein x, y, and z are about 0.85≦

x/z≦

about 3.05, and about 0.65≦

y/z≦

about 1.70 in Formula 1.

3. The semiconductor device of claim 1, wherein x, y, and z are about 1.15≦

x/z≦

about 2.05, and about 1.15≦

y/z≦

about 1.70 in Formula 1.

4. The semiconductor device of claim 1, wherein x, y, and z are about 1.25≦

x/z≦

about 1.95, and about 1.25≦

y/z≦

about 1.70 in Formula 1.

5. The semiconductor device of claim 1, wherein x, y, and z are about 1.25≦

x/z≦

about 1.45, and about 1.45≦

y/z≦

about 1.65 in Formula 1.

6. The semiconductor device of claim 1, wherein the source and drain electrodes are formed of a metal oxide selected from the group consisting of tin-doped indium oxide (ITO), indium zinc oxide (IZO), and aluminum-doped zinc oxide (ZAO).

7. The semiconductor device of claim 1, wherein the source and drain electrodes include a metal selected from the group consisting of titanium (Ti), platinum (Pt), chromium (Cr), tungsten (W), aluminum (Al), nickel (Ni), copper (Cu), molybdenum (Mo), tantalum (Ta) and an alloy thereof.

8. The semiconductor device of claim 1, wherein the source and drain electrodes are formed of a plurality of metal layers.

9. The semiconductor device of claim 1, wherein an n⁺ layer is formed between the source or drain electrode and the active layer.

10. The semiconductor device of claim 1, wherein the gate insulating layer includes a nitride, an oxide, or a high dielectric oxide.

11. The semiconductor device of claim 1, wherein the gate electrode includes a metal selected from the group consisting of titanium (Ti), platinum (Pt), chromium (Cr), tungsten (W), aluminum (Al), nickel (Ni), copper (Cu), molybdenum (Mo), tantalum (Ta) and an alloy thereof.

12. The semiconductor device of claim 1, wherein the substrate is a glass substrate or a plastic substrate.

13. The semiconductor device of claim 1, wherein the active layer is amorphous.

14. A method of manufacturing a semiconductor device, the method comprising:

forming an active layer including a composite represented by Formula 1 below, source and drain electrodes, a gate insulating layer and a gate electrode on a substrate,

x(Ga₂O₃).y(In₂O₃).z(ZnO) 

 

Formula 1

wherein, about 0.75≦

x/z≦

about 3.15, and about 0.55≦

y/z≦

about 1.70.

15. The method of claim 14, wherein the active layer is formed on the substrate, the source and drain electrodes are formed to be electrically connected to the active layer, the gate insulating layer is formed on the active layer, and the gate electrode is formed on the active layer.

16. The method of claim 14, wherein the gate electrode is formed on the substrate, the gate insulating layer is formed on the gate electrode, the active layer is formed on the gate insulating layer, and the source and drain electrodes are formed to be electrically connected to the active layer.

17. The method of claim 14, wherein x, y and z are about 0.85≦

x/z≦

about 3.05, and about 0.65≦

y/z≦

about 1.70 in Formula 1.

18. The method of claim 14, wherein x, y, and z are about 1.15≦

x/z≦

about 2.05, and about 1.15≦

y/z≦

about 1.70 in Formula 1.

19. The method of claim 14, wherein x, y, and z are about 1.25≦

x/z≦

about 1.95, and about 1.25≦

y/z≦

about 1.70 in Formula 1.

20. The method of claim 14, wherein x, y, and z are about 1.25≦

x/z≦

about 1.45, and about 1.45≦

y/z≦

about 1.65 in Formula 1.

21. The method of claim 14, wherein the source and drain electrodes are formed of a metal oxide.

22. The method of claim 14, further comprising:

forming an n⁺ layer between the active layer and the source and drain electrodes.

23. The method of claim 14, further comprising:

annealing the active layer and the source and drain electrodes, after forming the active layer and the source and drain electrodes.

24. The method of claim 23, wherein annealing is performed at a temperature of about 400°

C. or less in a nitrogen atmosphere.

25. The method of claim 14, wherein the active layer is amorphous.

26. A display device including a semiconductor device comprising:

a substrate;

an active layer including a composite represented by Formula 1 below, on the substrate;

source and drain electrodes electrically connected to the active layer;

a gate electrode on the active layer; and

a gate insulating layer between the gate electrode and the active layer;

x(Ga₂O₃).y(In₂O₃).z(ZnO) 

 

Formula 1

wherein, about 0.75≦

x/z≦

about 3.15, and about 0.55≦

y/z≦

about 1.70.

27. The display device of claim 26, wherein x, y, and z are about 0.85≦

x/z≦

about 3.05, and about 0.65≦

y/z≦

about 1.70 in Formula 1.

28. The display device of claim 26, wherein x, y, and z are about 1.15≦

x/z≦

about 2.05, and about 1.15≦

y/z≦

about 1.70 in Formula 1.

29. The display device of claim 26, wherein x, y, and z are about 1.25≦

x/z≦

about 1.95, and about 1.25≦

y/z≦

about 1.70 in Formula 1.

30. The display device of claim 26, wherein x, y, and z are about 1.25≦

x/z≦

about 1.45, and about 1.45≦

y/z≦

about 1.65 in Formula 1.

31. The display device of claim 26, wherein the source and drain electrodes are formed of a metal oxide selected from the group consisting of tin-doped indium oxide (ITO), indium zinc oxide (IZO), and aluminum-doped zinc oxide (ZAO).

32. The display device of claim 26, wherein the source and drain electrodes include a metal selected from the group consisting of titanium (Ti), platinum (Pt), chromium (Cr), tungsten (W), aluminum (Al), nickel (Ni), copper (Cu), molybdenum (Mo), tantalum (Ta) and an alloy thereof.

33. The display device of claim 26, wherein the source and drain electrodes are formed of a plurality of metal layers.

34. The display device of claim 26, wherein an n⁺ layer is formed between the source or drain electrode and the active layer.

35. The display device of claim 26, wherein the gate insulating layer includes a nitride, an oxide, or a high dielectric oxide.

36. The display device of claim 26, wherein the gate electrode includes a metal selected from the group consisting of titanium (Ti), platinum (Pt), chromium (Cr), tungsten (W), aluminum (Al), nickel (Ni), copper (Cu), molybdenum (Mo), tantalum (Ta) and an alloy thereof.

37. The display device of claim 26, wherein the substrate is a glass substrate or a plastic substrate.

38. The display device of claim 26, wherein the active layer is amorphous.

39. A method of manufacturing a display device including a semiconductor device, the method comprising:

forming an active layer including a composite represented by Formula 1 below, source and drain electrodes, a gate insulating layer and a gate electrode on a substrate,

x(Ga₂O₃).y(In₂O₃).z(ZnO) 

 

Formula 1

wherein, about 0.75≦

x/z≦

about 3.15, and about 0.55≦

y/z≦

about 1.70.

40. The method of claim 39, wherein the active layer is formed on the substrate, the source and drain electrodes are formed to be electrically connected to the active layer, the gate insulating layer is formed on the active layer, and the gate electrode is formed on the active layer.

41. The method of claim 39, wherein the gate electrode is formed on the substrate, the gate insulating layer is formed on the gate electrode, the active layer is formed on the gate insulating layer, and the source and drain electrodes are formed to be electrically connected to the active layer.

42. The method of claim 39, wherein x, y and z are about 0.85≦

x/z≦

about 3.05, and about 0.65≦

y/z≦

about 1.70 in Formula 1.

43. The method of claim 39, wherein x, y, and z are about 1.15≦

x/z≦

about 2.05, and about 1.15≦

y/z≦

about 1.70 in Formula 1.

44. The method of claim 39, wherein x, y, and z are about 1.25≦

x/z≦

about 1.95, and about 1.25≦

y/z≦

about 1.70 in Formula 1.

45. The method of claim 39, wherein x, y, and z are about 1.25≦

x/z≦

about 1.45, and about 1.45≦

y/z≦

about 1.65 in Formula 1.

46. The method of claim 39, wherein the source and drain electrodes are formed of a metal oxide.

47. The method of claim 39, further comprising:

forming an n⁺ layer between the active layer and the source and drain electrodes.

48. The method of claim 39, further comprising:

annealing the active layer and the source and drain electrodes, after forming the active layer and the source and drain electrodes.

49. The method of claim 48, wherein annealing is performed at a temperature of about 400°

C. or less in a nitrogen atmosphere.

50. The method of claim 39, wherein the active layer is amorphous.