NON-LINEAR ELEMENT, DISPLAY DEVICE, AND ELECTRONIC DEVICE

• US 20110101355A1
• Filed: 10/26/2010
• Published: 05/05/2011
• Est. Priority Date: 10/30/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 9,105,609 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/22 including, apart from doping materials or other impurities, only AIIBVI compounds
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/7391 Gated diode structures
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

Claims

1. A non-linear element comprising:

a first electrode provided over a substrate;

an oxide semiconductor film provided on and in contact with the first electrode;

a second electrode provided on and in contact with the oxide semiconductor film;

a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and

a plurality of third electrodes adjacent to the oxide semiconductor film with the gate insulating film interposed therebetween, the plurality of third electrodes being in contact with the gate insulating film,

wherein the plurality of third electrodes is connected to the first electrode or the second electrode.

5. The non-linear element according to claim 1,

wherein the first electrode functions as one of a source electrode and a drain electrode,

wherein the second electrode functions as the other of the source electrode and the drain electrode, and

wherein the plurality of third electrode functions as a gate electrode.

8. The non-linear element according to claim 1,

wherein the plurality of third electrodes is connected to the first electrode or the second electrode via a wiring.

11. The non-linear element according to any one of claims 1 to 4, wherein the oxide semiconductor film comprises hydrogen at a concentration of 5×

10¹⁹ atoms/cm³ or less.

12. The non-linear element according to claim 11, wherein the concentration of hydrogen in the oxide semiconductor film is detected by secondary ion mass spectrometry.

13. The non-linear element according to any one of claims 1 to 4, wherein the oxide semiconductor film has a carrier concentration of 5×

10¹⁴ atoms/cm³ or less.

14. The non-linear element according to any one of claims 1 to 4,

wherein at least a portion of the gate insulating film is in contact with the oxide semiconductor film, and

wherein the at least portion is an oxide insulating film.

15. The non-linear element according to claim 14,

wherein the oxide insulating film is a silicon oxide film, and

wherein the silicon oxide film is covered with silicon nitride.

16. A display device comprising a protection circuit comprising the non-linear element according to any one of claims 1 to 4.

17. An electronic device comprising the display device according to claim 16.

2. A non-linear element comprising:

a plurality of first electrodes provided over a substrate;

an oxide semiconductor film provided on and in contact with the plurality of first electrodes;

a second electrode provided on and in contact with the oxide semiconductor film;

a gate insulating film covering the plurality of first electrodes, the oxide semiconductor film, and the second electrode; and

a plurality of third electrodes adjacent to the oxide semiconductor film with the gate insulating film interposed therebetween, the plurality of third electrodes being in contact with the gate insulating film,

wherein at least one of the plurality of third electrodes is connected to at least one of the plurality of first electrodes or the second electrode.

6. The non-linear element according to claim 2,

wherein each of the plurality of first electrodes functions as one of a source electrode and a drain electrode,

wherein the second electrode functions as the other of the source electrode and the drain electrode, and

wherein the plurality of third electrodes functions as a gate electrode.

9. The non-linear element according to claim 2,

wherein the at least one of the plurality of third electrodes is connected to the at least one of the plurality of first electrodes or the second electrode via a wiring.

3. A non-linear element comprising:

a first electrode over a substrate;

an oxide semiconductor film provided on and in contact with the first electrode;

a second electrode provided on and in contact with the oxide semiconductor film;

a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and

a third electrode having a ring shape, the third electrode being in contact with the gate insulating film and surrounding the second electrode,

wherein the third electrode is connected to the first electrode or the second electrode.

7. The non-linear element according to claim 3,

wherein the first electrode functions as one of a source electrode and a drain electrode,

wherein the second electrode functions as the other of the source electrode and the drain electrode, and

wherein the third electrode functions as a gate electrode.

10. The non-linear element according to claim 3 or 4,

wherein the gate electrode is connected to the first electrode or the second electrode via a wiring.

4. A non-linear element comprising:

a first electrode provided over a substrate;

an oxide semiconductor film provided on and in contact with the first electrode;

a second electrode provided on and in contact with the oxide semiconductor film;

a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and

a gate electrode adjacent to the oxide semiconductor film with the gate insulating film interposed therebetween, the gate electrode being in contact with the gate insulating film,

wherein the gate electrode is connected to the first electrode or the second electrode,

wherein the first electrode functions as one of a source electrode and a drain electrode, and

wherein the second electrode functions as the other of the source electrode and the drain electrode.