TRANSISTOR
First Claim
1. A transistor comprising:
- a first electrode over a substrate;
an oxide semiconductor film on and in contact with the first electrode;
a second electrode on and in contact with the oxide semiconductor film;
a gate insulating film on at least side surfaces of the oxide semiconductor film; and
a third electrode having a ring shape, the third electrode adjacent to the side surfaces of the oxide semiconductor film with the gate insulating film interposed therebetween.
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Accused Products
Abstract
It is an object to provide a thin film transistor with high speed operation, in which a large amount of current can flow when the thin film transistor is on and off-state current is extremely reduced when the thin film transistor is off. The thin film transistor is a vertical thin film transistor in which a channel formation region is formed using an oxide semiconductor film in which hydrogen is contained in an oxide semiconductor at a concentration of lower than or equal to 5×1019/cm3, preferably lower than or equal to 5×1018/cm3, more preferably lower than or equal to 5×1017/cm3, hydrogen or an OH group contained in the oxide semiconductor is/are removed, and carrier concentration is lower than or equal to 5×1014/cm3, preferably lower than or equal to 5×1012/cm3.
169 Citations
16 Claims
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1. A transistor comprising:
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a first electrode over a substrate; an oxide semiconductor film on and in contact with the first electrode; a second electrode on and in contact with the oxide semiconductor film; a gate insulating film on at least side surfaces of the oxide semiconductor film; and a third electrode having a ring shape, the third electrode adjacent to the side surfaces of the oxide semiconductor film with the gate insulating film interposed therebetween. - View Dependent Claims (2, 3, 4, 5)
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6. A transistor comprising:
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a first electrode over a substrate; an oxide semiconductor film on and in contact with the first electrode; a second electrode on and in contact with the oxide semiconductor film; a gate insulating film on at least side surfaces of the oxide semiconductor film; a third electrode having a ring shape, the third electrode adjacent to the side surfaces of the oxide semiconductor film with the gate insulating film interposed therebetween; and an interlayer insulating film over the third electrode. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A transistor comprising:
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a first electrode over a substrate; an island-shaped oxide semiconductor film on and in contact with the first electrode; a second electrode on and in contact with the island-shaped oxide semiconductor film; a gate insulating film on at least side surfaces of the island-shaped oxide semiconductor film; and a third electrode covering the side surfaces of the island-shaped oxide semiconductor film with the gate insulating film interposed therebetween. - View Dependent Claims (13, 14, 15, 16)
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Specification