SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a semiconductor layer containing a halogen element over a plastic substrate; and
a semiconductor element over the semiconductor layer containing the halogen element,wherein concentration of the halogen element contained in the semiconductor layer is equal to or higher than 1×
1017 cm−
3 and equal to or lower than 2×
1019 cm−
3.
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Accused Products
Abstract
A separation layer containing a halogen element is formed over a glass substrate by a plasma CVD method; a semiconductor element is formed over the separation layer; and separation is then performed inside the separation layer or at its interface, so that the large-area glass substrate and the semiconductor element are detached from each other. In order to perform detachment at the interface between the glass substrate and the separation layer, the separation layer may have concentration gradient of the halogen element, and the halogen element is contained more near the interface between the separation layer and the glass substrate than in the other areas.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a semiconductor layer containing a halogen element over a plastic substrate; and a semiconductor element over the semiconductor layer containing the halogen element, wherein concentration of the halogen element contained in the semiconductor layer is equal to or higher than 1×
1017 cm−
3 and equal to or lower than 2×
1019 cm−
3. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a semiconductor layer containing a halogen element over a plastic substrate; and a light-emitting element over the semiconductor layer containing the halogen element, wherein concentration of the halogen element contained in the semiconductor layer is equal to or higher than 1×
1017 cm−
3 and equal to or lower than 2×
1019 cm−
3. - View Dependent Claims (7, 8, 9, 10)
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Specification