SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20110101363A1
• Filed: 12/28/2010
• Published: 05/05/2011
• Est. Priority Date: 05/31/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: TORIUMI, Satoshi
• Granted Patent: US 8,487,342 B2
• Time in Patent Office: Days
• US Class Current: 257/62
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]
• CPC Class Codes: H10K 59/17 Passive-matrix OLED displays
• CPC Class Codes: H10K 71/80 using temporary substrates

Abstract

A separation layer containing a halogen element is formed over a glass substrate by a plasma CVD method; a semiconductor element is formed over the separation layer; and separation is then performed inside the separation layer or at its interface, so that the large-area glass substrate and the semiconductor element are detached from each other. In order to perform detachment at the interface between the glass substrate and the separation layer, the separation layer may have concentration gradient of the halogen element, and the halogen element is contained more near the interface between the separation layer and the glass substrate than in the other areas.

Claims

1. A semiconductor device comprising:

a semiconductor layer containing a halogen element over a plastic substrate; and

a semiconductor element over the semiconductor layer containing the halogen element,

wherein concentration of the halogen element contained in the semiconductor layer is equal to or higher than 1×

10¹⁷ cm<sup>−

3</sup> and equal to or lower than 2×

10¹⁹ cm<sup>−

3</sup>.

2. The semiconductor device according to claim 1,

wherein the halogen element is fluorine or chlorine.

3. The semiconductor device according to claim 1,

wherein the semiconductor layer is an amorphous silicon film.

4. The semiconductor device according to claim 1,

wherein an adhesive layer is provided between the plastic substrate and the semiconductor layer containing the halogen element.

5. The semiconductor device according to claim 1,

wherein a buffer layer is further provided between the semiconductor layer containing the halogen element and the semiconductor element.

6. A semiconductor device comprising:

a semiconductor layer containing a halogen element over a plastic substrate; and

a light-emitting element over the semiconductor layer containing the halogen element,

wherein concentration of the halogen element contained in the semiconductor layer is equal to or higher than 1×

10¹⁷ cm<sup>−

3</sup> and equal to or lower than 2×

10¹⁹ cm<sup>−

3</sup>.

7. The semiconductor device according to claim 6,

wherein the halogen element is fluorine or chlorine.

8. The semiconductor device according to claim 6,

wherein the semiconductor layer is an amorphous silicon film.

9. The semiconductor device according to claim 6,

wherein an adhesive layer is provided between the plastic substrate and the semiconductor layer containing the halogen element.

10. The semiconductor device according to claim 6,

wherein a buffer layer is further provided between the semiconductor layer containing the halogen element and the light-emitting element.