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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20110101363A1
  • Filed: 12/28/2010
  • Published: 05/05/2011
  • Est. Priority Date: 05/31/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer containing a halogen element over a plastic substrate; and

    a semiconductor element over the semiconductor layer containing the halogen element,wherein concentration of the halogen element contained in the semiconductor layer is equal to or higher than 1×

    1017 cm

    3
    and equal to or lower than 2×

    1019 cm

    3
    .

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