PAPER INCLUDING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A paper including a semiconductor device, the semiconductor device comprising:
- a flexible base; and
a stacked-layer body over the flexible base, the stacked-layer body comprising an element layer having a circuit including a transistor, and a sealing layer for sealing a top surface of the element layer,wherein a thickness of the semiconductor device is less than or equal to 30 μ
m.
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Accused Products
Abstract
Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.
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Citations
20 Claims
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1. A paper including a semiconductor device, the semiconductor device comprising:
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a flexible base; and a stacked-layer body over the flexible base, the stacked-layer body comprising an element layer having a circuit including a transistor, and a sealing layer for sealing a top surface of the element layer, wherein a thickness of the semiconductor device is less than or equal to 30 μ
m. - View Dependent Claims (2, 3, 4, 5)
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6. A paper including a semiconductor device, the semiconductor device comprising:
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a flexible base; and a stacked-layer body over the flexible base, the stacked-layer body comprising an element layer having a circuit including a transistor, and a sealing layer for sealing a top surface of the element layer, wherein a side surface of the stacked-layer body is formed of the sealing layer and stacked-layer films of insulating films that are formed when the circuit is manufactured. - View Dependent Claims (7, 8, 9, 10)
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11. A paper including a semiconductor device, the semiconductor device comprising:
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a flexible base; and a stacked-layer body over the flexible base, the stacked-layer body comprising an element layer having a circuit including a transistor, and a sealing layer for sealing a top surface of the element layer, wherein a side surface of the element layer is made of stacked-layer films of insulating films that are formed when the circuit is manufactured, and wherein a side surface of the stacked-layer body is formed when the element layer is cut together with the sealing layer to separate each semiconductor device from one another. - View Dependent Claims (12, 13, 14, 15)
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16. A paper including a semiconductor device, the semiconductor device comprising:
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a flexible base; an element layer over the flexible base, having a circuit including a transistor; and a sealing layer stacked over the element layer and sealing a top surface of the element layer, wherein a side surface of the element layer is made of stacked-layer films of insulating films formed when manufacturing the circuit, and is aligned with a side surface of the sealing layer. - View Dependent Claims (17, 18, 19, 20)
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Specification