LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME

• US 20110101380A1
• Filed: 01/10/2011
• Published: 05/05/2011
• Est. Priority Date: 07/23/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SEO, Satoshi, KUMAKI, Daisuke
• Granted Patent: US 8,368,060 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/00 Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof H10K50/00 takes precedence; devices consisting of a plurality of semiconductor components formed in or on a common substrate and including semiconductor components having potential barriers, specially adapted for light emission H01L27/15; semiconductor lasers H01S5/00
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/155 comprising dopants
• CPC Class Codes: H10K 50/157 between the light-emitting layer and the cathode
• CPC Class Codes: H10K 50/165 comprising dopants
• CPC Class Codes: H10K 50/30 Organic light-emitting transistors
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3

Abstract

An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

Claims

1. A light emitting device comprising:

a first electrode;

a first layer over the first electrode, the first layer comprising a first substance with a hole transporting property and a second substance with an electron accepting property with respect to the first substance;

a second layer over the first layer, the second layer comprising a third substance with an electron transporting property and a fourth substance with an electron donating property with respect to the third substance;

a third layer over the second layer, the third layer comprising a light emitting substance; and

a second electrode over the third layer.

2. The light emitting device according to claim 1,

wherein the hole transporting property of the first substance is stronger than an electron transporting property thereof, and

wherein the electron transporting property of the third substance is stronger than a hole transporting property thereof.

3. The light emitting device according to claim 1, wherein the first layer is in contact with the first electrode.

4. The light emitting device according to claim 1, wherein the first electrode is capable of transmitting visible light.

5. The light emitting device according to claim 1, wherein the first electrode and the second electrode function as a cathode and an anode, respectively.

6. An electronic appliance comprising the light emitting device according to claim 1.

7. A lighting appliance comprising the light emitting device according to claim 1.

8. A light emitting device comprising:

a first electrode;

a first layer over the first electrode, the first layer comprising a p-type semiconductor;

a second layer over the first layer, the second layer comprising an n-type semiconductor;

a third layer over the second layer, the third layer comprising a light emitting substance; and

a second electrode over the third layer.

9. The light emitting device according to claim 8, wherein the first layer comprises an aromatic amine and a metal oxide selected from molybdenum oxide and vanadium oxide.

10. The light emitting device according to claim 8, wherein the first layer comprises an aromatic amine and molybdenum oxide.

11. The light emitting device according to claim 8, wherein the second layer comprises a metal complex and a metal selected from an alkali metal, an alkali earth metal, and a rare-earth metal.

12. The light emitting device according to claim 8, wherein the first layer is in contact with the first electrode.

13. The light emitting device according to claim 8, wherein the first electrode is capable of transmitting visible light.

14. The light emitting device according to claim 8, wherein the first electrode and the second electrode function as a cathode and an anode, respectively.

15. An electronic appliance comprising the light emitting device according to claim 8.

16. A lighting appliance comprising the light emitting device according to claim 8.