GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LAMP
First Claim
1. A Group III nitride semiconductor device which is obtained by laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, whereinthe buffer layer is made of AlN,a thickness of the buffer layer is within a range of 10 to 500 nm, anda lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state.
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Abstract
A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer (12) made of a Group III nitride compound on a substrate (11), wherein the buffer layer (12) is made of AlN, and a lattice constant of a-axis of the buffer layer (12) is smaller than a lattice constant of a-axis of AlN in a bulk state.
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Citations
17 Claims
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1. A Group III nitride semiconductor device which is obtained by laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, wherein
the buffer layer is made of AlN, a thickness of the buffer layer is within a range of 10 to 500 nm, and a lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state.
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6. (canceled)
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7. (canceled)
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11. A method for manufacturing a Group III nitride semiconductor device, comprising:
- laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, wherein
a thickness of the buffer layer is within a range of 10 to 500 nm, and the buffer layer is made of AlN under a condition where a lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state. - View Dependent Claims (12, 13, 14, 17)
- laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, wherein
Specification