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GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LAMP

  • US 20110101391A1
  • Filed: 03/06/2009
  • Published: 05/05/2011
  • Est. Priority Date: 03/13/2008
  • Status: Active Grant
First Claim
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1. A Group III nitride semiconductor device which is obtained by laminating at least a buffer layer made of a Group III nitride compound and a ground layer made of a Group III nitride semiconductor, which is formed on the buffer layer, on a substrate, whereinthe buffer layer is made of AlN,a thickness of the buffer layer is within a range of 10 to 500 nm, anda lattice constant of a-axis of the buffer layer is smaller than a lattice constant of a-axis of AlN in a bulk state.

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