SEMICONDUCTOR DEVICE

• US 20110101417A1
• Filed: 01/13/2011
• Published: 05/05/2011
• Est. Priority Date: 05/28/2004
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yamaguchi, Masakazu, Inoue, Tomoki, Sugiyama, Koichi, OGURA, Tsuneo, Ninomiya, Hideaki
• Granted Patent: US 8,319,314 B2
• Time in Patent Office: Days
• US Class Current: 257/139
• CPC Class Codes: H01L 29/0834 Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

A semiconductor device comprises a first base layer of a first conductivity type; a plurality of second base layers of a second conductivity type, provided on a part of a first surface of the first base layer; trenches formed on each side of the second base layers, and formed to be deeper than the second base layers; an emitter layer formed along the trench on a surface of the second base layers; a collector layer of the second conductivity type, provided on a second surface of the first base layer opposite to the first surface; an insulating film formed on an inner wall of the trench, the insulating film being thicker on a bottom of the trench than on a side surface of the trench; a gate electrode formed within the trench, and isolated from the second base layers and the emitter layer by the insulating film; and a space section provided between the second base layers adjacent to each other, the space section being deeper than the second base layers and being electrically isolated from the emitter layer and the second base layers.

Claims

1. A semiconductor device, comprising:

a first base layer of a first conductivity type;

a plurality of second base layers of a second conductivity type provided on a part of a first surface of the first base layer;

a plurality of trenches formed entire between the second base layers adjacent to each other, widths of the trenches being wider than those of the second base layers, and depths of the trenches being deeper than those of the second base layers;

an emitter layer formed along one of the trenches on a surface of one of the second base layers;

a collector layer of the second conductivity type, provided below a second surface of the first base layer opposite to the first surface;

a plurality of insulating films formed on inside surfaces of the trenches; and

a space section including at least a gate electrode formed within one of the trenches, and isolated from the second base layers and the emitter layer by the insulating film.

2. The semiconductor device according to claim 1, wherein the gate electrode is filled between the insulating films provided on both side surfaces of each trench.

3. The semiconductor device according to claim 1, wherein

the gate electrode is provided within each trench through the insulating film;

and

the device further comprises an inside insulating film filled inside of the gate electrode.

4. The semiconductor device according to claim 1 further comprising:

an emitter electrode formed between the gate electrodes through the insulating film.

5. The semiconductor device according to claim 1, wherein

a plurality of gate electrodes are provided in each trench, respectively;

and

the device further comprises an intervention insulating film filled between the gate electrodes in each trench.

6. The semiconductor device according to claim 5, wherein the gate electrodes are provided in an upper portion of each trench.

7. The semiconductor device according to claim 1, further comprising:

bottom semiconductor layers respectively provided below bottoms of the trenches, the bottom semiconductor layers having the first conductivity type higher in impurity concentration than the first base layer,

wherein a width between the bottom semiconductor layers adjacent to each other is smaller than a width between the trenches adjacent to each other.

8. The semiconductor device according to claim 1, wherein the insulating films are thicker on bottoms of the trenches than on side surfaces of the trenches.

9. A semiconductor device, comprising:

a first base layer of a first conductivity type;

a plurality of second base layers of a second conductivity type provided on a part of a first surface of the first base layer;

a plurality of trenches formed on both sides of the second base layers;

an emitter layer formed along one of the trenches on a surface of the second base layers;

a collector layer of the second conductivity type provided below a second surface of the first base layer opposite to the first surface;

a plurality of insulating films formed on inside surfaces of the trenches;

a plurality of gate electrodes formed along side surfaces of each trench, and isolated from the second base layers and the emitter layer by the insulating films; and

a plurality of intervention insulating films filled between the gate electrodes in each trench.

10. The semiconductor device according to claim 9, wherein the gate electrodes are provided in an upper portion of each trench.

11. The semiconductor device according to claim 9 further comprising:

an emitter electrode formed between the gate electrodes through the insulating film.

12. The semiconductor device according to claim 9, wherein

the trenches are formed entirely between the second base layers adjacent to each other, widths of the trenches are wider than those of the second base layers, and depths of the trenches are deeper than those of the second base layers;

and

space sections including the gate electrodes are formed within the trenches.

13. The semiconductor device according to claim 12, wherein the gate electrode is filled between the insulating films provided on both side surfaces of each trench.

14. The semiconductor device according to claim 12, wherein

the gate electrode is provided within each trench through the insulating film;

and

the device further comprises an inside insulating film filling an inside of the gate electrode.

15. The semiconductor device according to claim 9, wherein the insulating films are thicker on bottoms of the trenches than on side surfaces of the trenches.