SEMICONDUCTOR DEVICE
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Abstract
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
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Citations
34 Claims
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1-14. -14. (canceled)
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15. A semiconductor device, comprising an nMISFET and a pMISFET, wherein
the nMISFET includes a first active region divided by an isolation region and made of a first semiconductor region, a first gate electrode formed on the first active region, and a first stress film which is formed on the first active region to cover the first gate electrode and has a first stress, the pMISFET includes a second active region divided by the isolation region and made of a second semiconductor region, a second gate electrode formed on the second active region, a second stress film which is formed on the second active region to cover the second gate electrode and has a second stress, and the first stress film and the second stress film overlap on the isolation region, the first stress and the second stress are different stresses from each other, the first stress film is formed not to be located on an upper surface of the second gate electrode, and the second stress film is formed not to be located on an upper surface of the first gate electrode.
Specification