SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• US 20110101428A1
• Filed: 01/04/2011
• Published: 05/05/2011
• Est. Priority Date: 08/15/2007
• Status: Active Grant

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Inventors: Okabe, Kenichi
• Granted Patent: US 8,164,142 B2
• Time in Patent Office: Days
• US Class Current: 257/288
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/26566 of a cluster, e.g. using a gas cluster ion beam
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

According to an aspect of an embodiment, a semiconductor device has a semiconductor substrate, a gate insulating film on the semiconductor substrate, a gate electrode formed on the gate insulating film, an impurity diffusion region formed in an area of the semiconductor substrate adjacent to the gate electrode to a first depth to the semiconductor substrate, the impurity diffusion region containing impurity, an inert substance containing region formed in the area of the semiconductor substrate to a second depth deeper than the first depth, the inert substance containing region containing an inert substance, and a diffusion suppressing region formed in the area of the semiconductor substrate to a third depth deeper than the second depth, the diffusion suppressing region containing a diffusion suppressing substance suppressing diffusion of the impurity.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a gate insulating film over the semiconductor substrate;

a gate electrode formed over the gate insulating film;

an impurity diffusion region formed in an area of the semiconductor substrate adjacent to the gate electrode to a first depth to the semiconductor substrate, the impurity diffusion region containing an impurity;

an inert substance containing region formed in the area of the semiconductor substrate to a second depth deeper than the first depth, the inert substance containing region containing an inert substance; and

a diffusion suppressing region formed in the area of the semiconductor substrate to a third depth deeper than the second depth, the diffusion suppressing region containing a diffusion suppressing substance suppressing diffusion of the impurity.

2. The semiconductor device according to claim 1, wherein the semiconductor substrate comprises a body of single crystal silicon and the inert substance is a substance heavier than silicon.

3. The semiconductor device according to claim 1, wherein the inert substance is germanium.

4. The semiconductor device according to claim 1, wherein the diffusion suppressing substance is carbon.

5. The semiconductor device according to claim 1, wherein the impurity is at least one of phosphorous, arsenic, boron, boron fluoride or cluster boron.