SEMICONDUCTOR DEVICE STRUCTURES WITH DUAL FIN STRUCTURES AND ELECTRONIC DEVICE

• US 20110101429A1
• Filed: 01/10/2011
• Published: 05/05/2011
• Est. Priority Date: 07/31/2007
• Status: Abandoned Application

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: McDaniel, Terrence
• Application Number:
  US12/987,746
• Publication Number:
  US 20110101429A1
• Time in Patent Office: Days
• US Class Current: 257/288
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7854 with rounded corners

Abstract

Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin structures on opposite sides in a protruding region of a substrate. The dual fins may be useful in forming single-gate, double-gate or triple-gate fin-PET devices. Electronic systems including such fin-FET devices are also disclosed.

Claims

1. A semiconductor device structure, comprising:

at least one protruding region extending from a surface of a substrate comprising a semiconductor material;

a layer of mask material over the surface of the substrate and outer surfaces of the at least one protruding region; and

a recess extending centrally through the semiconductor material of at least a portion of the at least one protruding region.

2. The semiconductor device of claim 1, wherein the layer of mask material comprises a conductive material.

3. The semiconductor device of claim 2, wherein the conductive material is selected from the group comprising titanium nitride, tungsten nitride, tungsten silicide, titanium silicide, platinum silicide, cobalt silicide, nickel silicide, tungsten, tantalum and tantalum nitride.

4. The semiconductor device of claim 2, further comprising:

dielectric material between the conductive material and the outer surfaces of the at least one protruding region.

5. An electronic device, comprising:

at least one semiconductor device, including;

a substrate comprising semiconductor material;

at least one protruding region extending from an active surface of the substrate;

a layer of mask material over the active surface of the substrate and outer surfaces of the at least one protruding region; and

a recess extending centrally through the semiconductor material of at least a portion of the at least one protruding region.

6. The electronic device of claim 5, wherein the mask material comprises a conductive material.

7. The electronic device of claim 6, further comprising:

dielectric material between the conductive material and the outer surfaces of the at least one protruding region.

8. The electronic device of claim 7, wherein the dielectric material comprises a gate dielectric and the conductive material comprises at least one gate electrode.