HYBRID BONDING INTERFACE FOR 3-DIMENSIONAL CHIP INTEGRATION

• US 20110101537A1
• Filed: 10/29/2009
• Published: 05/05/2011
• Est. Priority Date: 10/29/2009
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Donaton, Ricardo A., Petrarca, Kevin S., Barth, Karl W., Galis, Spyridon, Siddiqui, Shahab
• Granted Patent: US 8,159,060 B2
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/80357 being flush with the surface
• CPC Class Codes: H01L 2224/80895 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/80896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 2224/80986 Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
• CPC Class Codes: H01L 2224/9202 Forming additional connectors after the connecting process
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

Each of a first substrate and a second substrate includes a surface having a diffusion resistant dielectric material such as silicon nitride. Recessed regions are formed in the diffusion resistant dielectric material and filled with a bondable dielectric material. The patterns of the metal pads and bondable dielectric material portions in the first and second substrates can have a mirror symmetry. The first and second substrates are brought into physical contact and bonded employing contacts between metal pads and contacts between the bondable dielectric material portions. Through-substrate-via (TSV) structures are formed through bonded dielectric material portions. The interface between each pair of bonded dielectric material portions located around a TSV structure is encapsulated by two diffusion resistant dielectric material layers so that diffusion of metal at a bonding interface is contained within each pair of bonded dielectric material portions.

Claims

1. A bonded structure comprising:

a first substrate including a first diffusion resistant dielectric material layer and a first bondable dielectric material portion, wherein said first bondable dielectric material portion is embedded in said first diffusion resistant dielectric material layer;

a second substrate including a second diffusion resistant dielectric material layer and a second bondable dielectric material portion, wherein said second bondable dielectric material portion is embedded in said second diffusion resistant dielectric material layer and said first and second bondable dielectric material portions are bonded to form a bonded dielectric material portion; and

a through-substrate-via (TSV) structure extending through said first substrate and said second substrate, wherein said bonded dielectric material portion laterally surrounds a portion of said TSV structure and is encapsulated by said first and second diffusion resistant dielectric material layers and said TSV structure.

2. The bonded structure of claim 1, wherein a surface at which said first and second bondable dielectric material portions are bonded is coplanar with an interface between said first and second diffusion resistant dielectric material layers.

3. The bonded structure of claim 1, wherein said first diffusion resistant dielectric material layer laterally surrounds a second portion of said TSV structure and said second diffusion resistant dielectric material layer laterally surrounds a third portion of said TSV structure.

4. The bonded structure of claim 3, wherein said second portion of said TSV structure is vertically spaced from said third portion of said TSV structure by said portion of said TSV structure.

5. The bonded structure of claim 1, wherein said first substrate has a first end surface located on an opposite side of said first diffusion resistant dielectric material layer, said second substrate has a second end surface located on an opposite side of said second diffusion resistant dielectric material layer, and said TSV structure extends from said first end surface to said second end surface.

6. The bonded structure of claim 1, wherein said TSV structure comprises a through-substrate-via (TSV) liner and a through-substrate-via (TSV) fill portion, wherein said TSV liner comprises an elemental metal, an intermetallic alloy, a conductive metal nitride, a conductive metal carbide, or a combination thereof, and said TSV fill portion comprises an elemental metal or an intermetallic alloy.

7. The bonded structure of claim 6, wherein said TSV fill portion comprises an electroplatable material or an electroless-platable material.

8. The bonded structure of claim 1, further comprising:

a first metal pad embedded in said first diffusion resistant dielectric material layer; and

a second metal pad embedded in said second diffusion resistant dielectric material layer and bonded to said first metal pad.

9. The bonded structure of claim 8, wherein an interface between said first metal pad and said second metal pad is coplanar with an interface between said first diffusion resistant dielectric material layer and said second diffusion resistant dielectric material layer.

10. The bonded structure of claim 1, wherein said first and second bondable dielectric material portions are portions of silicon oxide and said first and second diffusion resistant dielectric material layers are layers of silicon nitride.

11. The bonded structure of claim 1, wherein each of said first and second substrates includes a semiconductor substrate and at least one semiconductor device located thereupon.

12. A method of forming a bonded structure, said method comprising:

forming a first bondable dielectric material portion within a first diffusion resistant dielectric material layer that is located in a first substrate;

forming a second bondable dielectric material portion within a second diffusion resistant dielectric material layer that is located in a second substrate;

brining said first substrate and said second substrate into contact with each other and bonding said first and second bondable dielectric material portions to form a bonded dielectric material portion;

forming a through-substrate-via (TSV) cavity that extends through said bonded dielectric material portion, whereby said bonded dielectric material portion contains a hole therethrough; and

forming a through-substrate-via (TSV) structure extending through said first substrate and said second substrate by filling said TSV cavity.

13. The method of claim 12, wherein, upon formation of said TSV structure, said bonded dielectric material portion laterally surrounds a portion of said TSV structure and is encapsulated by said first and second diffusion resistant dielectric material layers and said TSV structure.

14. The method of claim 12, further comprising:

recessing a portion of said first diffusion resistant dielectric material layer;

filling said recessed region of said first diffusion resistant dielectric material layer with a first bondable dielectric material;

planarizing said first bondable dielectric material to form said first bondable dielectric material portion;

recessing a portion of said second diffusion resistant dielectric material layer;

filling said recessed region of said second diffusion resistant dielectric material layer with a second bondable dielectric material; and

planarizing said second bondable dielectric material to form said second bondable dielectric material portion.

15. The method of claim 14, wherein an exposed surface of said first bondable dielectric material portion is coplanar with an exposed surface of said first diffusion resistant dielectric material layer after planarization of said first bondable dielectric material, and an exposed surface of said second bondable dielectric material portion is coplanar with an exposed surface of said second diffusion resistant dielectric material layer after planarization of said second bondable dielectric material.

16. The method of claim 12, further comprising:

forming a first metal pad in said first diffusion resistant dielectric material layer; and

forming a second metal pad in said first diffusion resistant dielectric material layer, wherein said second metal pad is bonded to said first metal pad after brining said first and second substrates into contact with each other and before forming said TSV cavity.

17. The method of claim 16, further comprising:

recessing a portion of said first diffusion resistant dielectric material layer;

filling said recessed region of said first diffusion resistant dielectric material layer with a first metal;

planarizing said first metal to form said first metal pad;

recessing a portion of said second diffusion resistant dielectric material layer;

filling said recessed region of said second diffusion resistant dielectric material layer with a second metal; and

planarizing said second metal to form said second metal pad.

18. The method of claim 12, further comprising:

forming a through-substrate-via (TSV) liner on sidewalls of said TSV cavity; and

forming a through-substrate-via (TSV) fill portion on sidewalls of said TSV liner, wherein said TSV cavity is filled by said TSV fill portion, and said TSV liner and said TSV fill portion collectively constitute said TSV structure.

19. The method of claim 18, wherein said TSV fill portion is formed by electroplating or electroless plating.

20. The method of claim 12, wherein said first and second bondable dielectric material portions are portions of silicon oxide and said first and second diffusion resistant dielectric material layers are layers of silicon nitride.