SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a first electrode layer and a second electrode layer over a first substrate;
a liquid crystal layer over the first electrode layer and the second electrode layer;
a first counter electrode layer and a second counter electrode layer over the liquid crystal layer; and
a second substrate over the first counter electrode layer and the second counter electrode layer,wherein the first electrode layer is a pixel electrode formed in a position overlapping with the first counter electrode layer with the liquid crystal layer therebetween; and
wherein the second electrode layer is an electrode layer of a driver circuit formed in a position overlapping with the second counter electrode layer with the liquid crystal layer therebetween.
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Accused Products
Abstract
When a pixel portion and a driver circuit are formed over one substrate and a counter electrode is formed over an entire surface of a counter substrate, the driver circuit may be adversely affected by an optimized voltage of the counter electrode. A semiconductor device according to the present invention has a structure in which: a liquid crystal layer is provided between a pair of substrates; one of the substrates is provided with a pixel electrode and a driver circuit; the other of the substrates is a counter substrate which is provided with two counter electrode layers in different potentials; and one of the counter electrode layers overlaps with the pixel electrode with the liquid crystal layer therebetween and the other of the counter electrode layers overlaps with the driver circuit with the liquid crystal layer therebetween. An oxide semiconductor layer is used for the driver circuit.
123 Citations
11 Claims
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1. A semiconductor device comprising:
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a first electrode layer and a second electrode layer over a first substrate; a liquid crystal layer over the first electrode layer and the second electrode layer; a first counter electrode layer and a second counter electrode layer over the liquid crystal layer; and a second substrate over the first counter electrode layer and the second counter electrode layer, wherein the first electrode layer is a pixel electrode formed in a position overlapping with the first counter electrode layer with the liquid crystal layer therebetween; and wherein the second electrode layer is an electrode layer of a driver circuit formed in a position overlapping with the second counter electrode layer with the liquid crystal layer therebetween. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first electrode layer, a second electrode layer, a third electrode layer, and a fourth electrode layer over a first substrate; a liquid crystal layer over the first electrode layer and the second electrode layer; a first counter electrode layer and a second counter electrode layer over the liquid crystal layer; and a second substrate over the first counter electrode layer and the second counter electrode layer, wherein the third electrode layer is electrically connected to the first counter electrode layer through a first conductive particle, wherein the fourth electrode layer is electrically connected to the first counter electrode layer through a second conductive particle, wherein the first electrode layer is a pixel electrode formed in a position overlapping with the first counter electrode layer with the liquid crystal layer therebetween; and wherein the second electrode layer is an electrode layer of a driver circuit formed in a position overlapping with the second counter electrode layer with the liquid crystal layer therebetween. - View Dependent Claims (8, 9, 10, 11)
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Specification