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Methods of Programming Semiconductor Memory Devices

  • US 20110103151A1
  • Filed: 10/15/2010
  • Published: 05/05/2011
  • Est. Priority Date: 11/03/2009
  • Status: Active Grant
First Claim
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1. A method of programming a plurality of memory cells that are connected to a wordline of a semiconductor memory device, the method comprising:

  • setting a plurality of target threshold voltage groups, wherein each target threshold voltage group includes at least one target threshold voltage;

    programming the plurality of memory cells of the semiconductor memory device by applying a plurality of program voltages to the word line; and

    adjusting a program end time for a first of the plurality of target threshold voltage groups.

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