Methods of Programming Semiconductor Memory Devices
First Claim
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1. A method of programming a plurality of memory cells that are connected to a wordline of a semiconductor memory device, the method comprising:
- setting a plurality of target threshold voltage groups, wherein each target threshold voltage group includes at least one target threshold voltage;
programming the plurality of memory cells of the semiconductor memory device by applying a plurality of program voltages to the word line; and
adjusting a program end time for a first of the plurality of target threshold voltage groups.
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Abstract
To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.
410 Citations
22 Claims
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1. A method of programming a plurality of memory cells that are connected to a wordline of a semiconductor memory device, the method comprising:
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setting a plurality of target threshold voltage groups, wherein each target threshold voltage group includes at least one target threshold voltage; programming the plurality of memory cells of the semiconductor memory device by applying a plurality of program voltages to the word line; and adjusting a program end time for a first of the plurality of target threshold voltage groups. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of programming a plurality of memory cells that are connected to a word line of a semiconductor memory device, the method comprising:
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assigning a plurality of target threshold voltages for the memory cells into a plurality of target threshold voltage groups, wherein each target threshold voltage group corresponds to a respective one of a plurality of program voltages; and applying the plurality of program voltages to the word line to program the memory cells, wherein at least some of the program voltages are first applied during different program loops. - View Dependent Claims (18)
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19. A method of programming a plurality of memory cells that are connected to a word line of a semiconductor memory device, the method comprising:
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assigning a plurality of target threshold voltages for the memory cells into a plurality of target threshold voltage groups, wherein each target threshold voltage group corresponds to a respective one of a plurality of program voltages; and adjusting a voltage level of a first target threshold voltage in the first of the plurality of target threshold voltage groups to adjust the program end time for the programming operations for the first of the plurality of target threshold voltage groups to be at substantially the same time as the program end time for the programming operations for a second of the plurality of target threshold voltage groups. - View Dependent Claims (20)
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21. A method of programming a plurality of memory cells that are connected to a word line of a semiconductor memory device, the method comprising:
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assigning a plurality of target threshold voltages for the memory cells into a plurality of target threshold voltage groups, wherein each target threshold voltage group corresponds to a respective one of a plurality of program voltages, and wherein each target threshold voltage group includes at least one target threshold voltage; applying a plurality of program voltages to the word line to program the plurality of memory cells, wherein the ones of the plurality of memory cells that are to be programmed to the target threshold voltages in each target threshold voltage group are programmed using a respective one of the plurality of program voltages; and applying a first forcing voltage to the bit lines of the memory cells that are to be programmed to a selected one of the target threshold voltages. - View Dependent Claims (22)
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Specification