METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE

• US 20110104829A1
• Filed: 04/03/2009
• Published: 05/05/2011
• Est. Priority Date: 04/07/2008
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Energies Alternatives Commissariat A L'Energie Atomique et AUX
• Inventors: Moulet, Jean-Sebastien, Di Cioccio, Lea, Migette, Marion
• Granted Patent: US 8,951,809 B2
• Time in Patent Office: Days
• US Class Current: 438/3
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: Y10S 414/135 Associated with semiconductor wafer handling
• CPC Class Codes: Y10S 414/141 includes means for gripping wafer

Abstract

A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate.

Claims

1-23. -23. (canceled)

24. A method of carrying out a transfer of one or more first components or of a first layer, from a first substrate to a second substrate, comprising:

a) placing in contact, against a first substrate, made of a ferroelectric material, the first component(s) or the first layer, and maintaining them, by electrostatic effect, against the first electrically charged substrate;

b) placing in contact, direct or by molecular adhesion, the components or of the layer with the second substrate; and

c) separation or dismantling the first substrate, leaving at least one part of each of the components or the layer on the second substrate.

25. A method according to claim 24, the c) dismantling being assisted thermally and/or mechanically and/or in an electrostatic manner.

26. A method according to claim 25, the c) dismantling being assisted by a rise in temperature.

27. A method according to claim 26, the rise in temperature being carried out by application of an increasing thermal ramp, of gradient greater than 5°

C./min.

28. A method according to claim 24, the c) dismantling being assisted by a difference between adhesion forces of the first components or of the first layer on the first substrate and on the second substrate.

29. A method according to of claim 24, the first substrate being charged in an intrinsic or assisted manner.

30. A method according to claim 24, the ferroelectric material of the first substrate being made of LiTaO₃, or LiNbO₃, or BaTiO₃, or SrTiO₃, or LaAlO₃, or LiAlO₃.

31. A method according to claim 24, the second substrate being at least partially made of semi-conductor material, or silicon, or fused silica, or quartz.

32. A method according to claim 24, at least one component or stamp or the layer being at least partially made of semi-conductor material.

33. A method according to claim 24, one or more of the components, or layer, having undergone before the a) placing, or undergoing, between the a) placing and the b) placing, a treatment by etching, and/or ion implantation, and/or deposition, and/or thermal.

34. A method according to claim 33, one or more of the components, or the layer, having undergone before the a) placing, or undergoing, between the a) placing and the b) placing, a treatment by ion implantation, defining in at least one of the components or in the layer, a fragilization area, along which a fracture is formed during the c) separation or dismantling.

35. A method according to claim 33, one or more of the components, or the layer, having undergone, before the a) placing, a treatment by ion implantation, defining in at least one of the components or in the layer, a fragilization area, along which a fracture is formed between the a) placing and the b) placing.

36. A method according to claim 33, the thermal treatment not inducing polarization inversion of the material of the first substrate.

37. A method according to claim 36, the thermal treatment being carried out by application of an increasing thermal ramp, of gradient less than 5°

C./min.

38. A method according to claim 24, at least one of the first components, or the first layer, and/or the surface of the first substrate having undergone at least one treatment for purpose of promoting contact or adhesion of the component with the surface.

39. A method according to claim 24, the surface of the second substrate and/or the surface of at least one of the first components or of the first layer, having undergone, before the b) placing, a preparation for purpose of molecular bonding.

40. A method according to claim 24, the surfaces of the components not being all at a same height in relation to the surface of the second substrate on which they are deposited.

41. A method according to claim 24, at least one of the components comprising at least one surface made of a compliant or elastic material.

42. A method of carrying out a transfer of at least two stages of components and/or of layer onto a second substrate, comprising:

carrying out a transfer of a first stage of one or more first components or of a first layer onto said second substrate according to claim 24, by a first substrate, made of a ferroelectric material;

then carrying out a transfer of a second stage of one or more second components or a second layer, onto the first stage.

43. A method according to claim 42, the transfer of a second stage being carried out by:

a′

) application and maintaining, by electrostatic effect, the one or more second components or of the second layer, on the first stage, by a substrate, made of a ferroelectric material, electrically charged;

b′

) placing in contact and transfer the components or the layer onto the first stage,

c′

) dismantling of the substrate made a ferroelectric material, leaving the component(s) or the second layer on the first stage.