METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT

• US 20110104836A1
• Filed: 06/09/2009
• Published: 05/05/2011
• Est. Priority Date: 06/27/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Höppel, Lutz, Strassburg, Martin, Engl, Karl, Rode, Patrick
• Granted Patent: US 8,283,191 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

Claims

1. A method for producing an optoelectronic component, comprising:

providing a silicon-based growth substrate, which has a first coefficient of thermal expansion;

applying a multilayered nitride-containing buffer layer sequence;

epitaxially depositing a layer sequence, which has a second coefficient of thermal expansion, different than the first coefficient of thermal expansion, and further comprises an active layer suitable for emitting electromagnetic radiation;

forming contacts in the epitaxially deposited layer sequence;

applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts;

removing the growth substrate;

structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation;

making contact with the epitaxially deposited layer sequence.

2. The method as claimed in claim 1, wherein the multilayered buffer layer sequence comprises a first partial buffer layer and at least one second partial buffer layer and is embodied for reducing thermal strains induced by the production process on account of the different first and second coefficients of thermal expansion.

3. The method as claimed in of claim 1, wherein the growth substrate is etched for the purpose of being removed and the multilayered buffer layer sequence serves as an etching stop.

4. The method as claimed in claim 1, wherein the layer sequence comprises a first doped partial layer and a second, differently doped partial layer deposited thereon, wherein a boundary region of the two partial layers forms the active layer and charge carrier recombination takes place in an operating mode of the component.

5. The method as claimed in claim 1, wherein the layer sequence comprises at least one current spreading layer.

6. The method as claimed in any claim 1, further comprising depositing a mirror layer on that side of the epitaxial layer sequence which is remote from the nitride-containing buffer layer sequence.

7. The method as claimed in claim 6, wherein the mirror layer forms a current spreading layer.

8. The method as claimed in claim 5, wherein the current spreading layer is formed between the multilayered nitride-containing buffer layer sequence and further partial layers of the epitaxial layer sequence.

9. The method as claimed in claim 1, wherein a partial buffer layer of the multilayered nitride-containing buffer layer sequence comprises the same material, in particular GaN, as a partial layer of the epitaxially grown layer sequence.

10. The method as claimed in claim 1, further comprising structuring, in particular by etching a surface of the multilayered buffer layer sequence in order to produce a light coupling-out layer.

11. The method as claimed in claim 1, wherein making contact comprises:

forming at least one hole with an opening on that side of the layer sequence which is remote from the multilayered buffer layer sequence;

forming an insulation layer on sidewalls of the hole;

filling the at least one hole with a conductive material, such that an electrical contact with the layer sequence is produced in at least in a bottom region of the at least one hole;

forming a bonding contact electrically connected to the conductive material.

12. The method as claimed in claim 1, wherein making contact comprises:

forming at least one through-hole in the carrier substrate with an opening wherein sidewalls of the through-hole are provided with an insulating material;

filling the at least one hole with an electrically conductive material for making contact with the layer sequence.

13. The method as claimed in claim 1, wherein the growth substrate substantially comprises silicon, and has at least one of the following spatial orientations:

orientation,

orientation,

orientation,

orientation and

orientation,

where k is an integer greater than 1.