METHOD FOR FABRICATING MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) DEVICE
First Claim
1. A method for fabricating micro-electro-mechanical system (MEMS) device, comprising:
- providing a substrate, having a first side and a second side;
forming a structural dielectric layer over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer;
performing a multi-stage patterning process on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed; and
performing an isotropic etching process from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.
26 Citations
45 Claims
-
1. A method for fabricating micro-electro-mechanical system (MEMS) device, comprising:
-
providing a substrate, having a first side and a second side; forming a structural dielectric layer over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer; performing a multi-stage patterning process on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed; and performing an isotropic etching process from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
-
-
34. A method for fabricating micro-electro-mechanical system (MEMS) device, comprising:
-
providing a substrate, having a first side and a second side; forming a structural dielectric layer over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer; patterning the structural dielectric layer to form a plurality of indent regions, each indent region has a tapered sidewall; forming a first metal layer on the structural dielectric layer, wherein the indent regions remain; forming a dielectric layer on the structural dielectric layer, wherein the indent regions remain; patterning the dielectric layer, wherein a remaining portion of the dielectric layer has a tapered sidewall and exposes the first metal layer at the indent regions; forming a second metal layer on the first metal layer and the remaining portion of the dielectric layer; forming a top dielectric layer and an etching stop layer on the second metal layer at a determined region; patterning the substrate to from a cavity and a plurality of venting holes, wherein the venting holes expose the structural dielectric layer; and performing an isotropic etching process to remove a portion of the structural dielectric layer and the top dielectric layer with the etching stop layer as a mask to expose the first metal layer and the second metal layer. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
-
Specification