Laser spike annealing for GaN LEDs
First Claim
1. A method of forming a gallium nitride (GaN) light-emitting diode (LED), comprising:
- forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer;
performing laser spike annealing (LSA) by scanning a laser beam over the p-GaN layer;
forming a transparent conducting layer atop the GaN multilayer structure; and
adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer.
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Accused Products
Abstract
Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
27 Citations
21 Claims
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1. A method of forming a gallium nitride (GaN) light-emitting diode (LED), comprising:
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forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer; performing laser spike annealing (LSA) by scanning a laser beam over the p-GaN layer; forming a transparent conducting layer atop the GaN multilayer structure; and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a gallium nitride (GaN) light-emitting diode (LED), comprising:
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forming a p-contact layer atop a substrate; forming atop the p-contact a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer, with the p-GaN layer adjacent the p-contact layer; forming a n-contact atop the n-GaN layer; and performing laser spike annealing (LSA) of the n-contact by scanning a laser beam over the n-contact. - View Dependent Claims (13, 14, 15, 16)
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17. A gallium nitride (GaN) light-emitting diode (LED), comprising:
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a substrate; a GaN multilayer structure formed atop the substrate and having a n-GaN layer and a p-GaN layer that sandwich an active layer, wherein the p-GaN layer has been laser spike annealed to have an activated dopant concentration of greater than about 5×
1017 cm−
3 and up to about 5×
1018 cm−
3;a transparent conducting layer atop the GaN multilayer structure; a p-contact formed atop the transparent conducting layer; and a n-contact formed atop an exposed portion of the n-GaN layer. - View Dependent Claims (18, 19)
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20. A gallium nitride (GaN) light-emitting diode (LED), comprising:
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a substrate; a p-contact layer formed atop the substrate; a GaN multilayer structure formed atop the p-contact layer and having a n-GaN layer and a p-GaN layer that sandwich an active layer, with the p-GaN layer adjacent the p-contact layer, and the n-GaN layer having been laser-spike annealed to achieve an active dopant concentration of about 3×
1019 to about 3×
102°
cm−
3; anda n-contact formed atop the n-GaN layer. - View Dependent Claims (21)
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Specification