LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR

• US 20110108798A1
• Filed: 04/23/2009
• Published: 05/12/2011
• Est. Priority Date: 04/25/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, June O
• Granted Patent: US 8,471,239 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.

Claims

1. A light emitting device comprising:

a support substrate;

a planar layer over the support substrate;

a wafer bonding layer over the planar layer;

a current spreading layer over the wafer bonding layer;

a second conductive semiconductor layer over the current spreading layer;

an active layer over the second conductive semiconductor layer;

a first conductive semiconductor layer over the active layer;

a first electrode layer over the first conductive semiconductor layer; and

a second electrode layer over the current spreading layer.

2. The light emitting device of claim 1, further comprising a reflective layer under the support substrate.

3. The light emitting device of claim 1, further comprising an ohmic contact layer between the first conductive semiconductor layer and the first electrode layer.

4. The light emitting device of claim 3, further comprising a light extracting structure layer between the first conductive semiconductor layer and the ohmic contact electrode layer.

5. The light emitting device of claim 1, further comprising a light extracting structure layer over the first conductive semiconductor layer.

6. The light emitting device of claim 1, further comprising a superlattice structure layer between the second conductive semiconductor layer and the current spreading layer.

7. The light emitting device of claim 1, wherein the support substrate is formed on a top surface thereof with a concavo-convex structure.

8. The light emitting device of claim 1, wherein the wafer bonding layer includes one of SiO₂, SiN_x, Al₂O₃, ZnO, ZnS, MgF₂, and SOG (spin on glass).

9. The light emitting device of claim 1, wherein the current spreading layer includes one of Ni—

Au—

O, ITO, and ZnO.

10. A light emitting device comprising:

a support substrate;

a metal thick film layer over the support substrate;

a wafer bonding layer over the metal thick film layer;

a current spreading layer over the wafer bonding layer;

a second conductive semiconductor layer over the current spreading layer;

an active layer over the second conductive semiconductor layer;

a first conductive semiconductor layer over the active layer;

a first electrode layer over the first conductive semiconductor layer; and

a second electrode layer over the current spreading layer.

11. The light emitting device of claim 10, further comprising an ohmic contact layer between the first conductive semiconductor layer and the first electrode layer.

12. The light emitting device of claim 11, further comprising a light extracting structure layer between the first conductive semiconductor layer and the ohmic contact electrode layer.

13. The light emitting device of claim 10, further comprising a light extracting structure layer over the first conductive semiconductor layer.

14. The light emitting device of claim 10, further comprising a superlattice structure layer between the second conductive semiconductor layer and the current spreading layer.

15. The light emitting device of claim 10, wherein the metal thick film layer includes at least one selected from the group consisting of Cu, Ag, Au, Ni, Ti, Nb, W, Cr, NiCr and CuW.

16. The light emitting device of claim 10, wherein the current spreading layer includes at least one selected from the group consisting of Al, Ag, Cu, Pt, Pd and Au.