Organic Light Emitting Display Device and Manufacturing Method Thereof
First Claim
1. An organic light emitting display device comprising:
- an active layer of a thin film transistor formed on a substrate;
a first conductive layer separately formed at opposite edge portions of the active layer;
a first insulation layer formed on the substrate and the first conductive layer;
a second conductive layer formed to correspond to a central area of the active layer with the first insulation layer interposed therebetween;
a fanout lower electrode separated a predetermined distance from the second conductive layer and formed of the same material in the same layer as that of the second conductive layer;
a pixel electrode separated a predetermined distance from the second conductive layer and formed of the same material in the same layer as that of the second conductive layer;
a third conductive layer formed on the second conductive layer;
a fanout upper electrode formed on the fanout lower electrode and formed of the same material in the same layer as that of the third conductive layer;
a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode; and
source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.
2 Assignments
0 Petitions
Accused Products
Abstract
An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.
-
Citations
20 Claims
-
1. An organic light emitting display device comprising:
-
an active layer of a thin film transistor formed on a substrate; a first conductive layer separately formed at opposite edge portions of the active layer; a first insulation layer formed on the substrate and the first conductive layer; a second conductive layer formed to correspond to a central area of the active layer with the first insulation layer interposed therebetween; a fanout lower electrode separated a predetermined distance from the second conductive layer and formed of the same material in the same layer as that of the second conductive layer; a pixel electrode separated a predetermined distance from the second conductive layer and formed of the same material in the same layer as that of the second conductive layer; a third conductive layer formed on the second conductive layer; a fanout upper electrode formed on the fanout lower electrode and formed of the same material in the same layer as that of the third conductive layer; a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode; and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method of manufacturing an organic light emitting display device, the method comprising:
-
sequentially forming a semiconductor layer and a first conductive layer on and above a substrate and patterning the semiconductor layer and the first conductive layer into an active layer and source/drain areas of a thin film transistor, in a first mask process; forming a first insulation layer on a structure of the first mask process, sequentially forming a second conductive layer and a third conductive layer on and above the first insulation layer, and simultaneously patterning the first insulation layer, the second conductive layer, and the third conductive layer into a gate lower electrode and a gate upper electrode of the thin film transistor, a lower electrode and an upper electrode of a fanout, and a pixel electrode, in a second mask process; forming a second insulation layer on a structure of the second mask process and removing the second insulation layer to have part of the source/drain areas and part of the pixel electrode exposed, in a third mask process; forming a fourth conductive layer on a structure of the third mask process and patterning the fourth conductive layer into source/drain electrodes of the thin film transistor, in a fourth mask process; and forming a third insulation layer on a structure of the fourth mask process and removing the second insulation layer and the third insulation layer to have the pixel electrode exposed, in a fifth mask process. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
Specification