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SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE

  • US 20110108888A1
  • Filed: 11/18/2010
  • Published: 05/12/2011
  • Est. Priority Date: 04/14/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising;

  • a first mono-crystallized layer comprisingfirst transistors, anda first metal layer forming at least a portion of connections between said first transistors; and

    a second layer comprising second transistors, said second transistors consisting essentially of mono-crystalline material, said second layer overlying said first metal layer,wherein said first metal layer comprises aluminum or copper, andwherein said second layer is less than one micron in thickness and comprises logic cells.

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