Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)
First Claim
1. A method of growing a planar non-polar III-Nitride epitaxial film, comprising:
- growing non-polar {10-10} m-plane III-Nitride on a suitable sapphire substrate using hydride vapor phase epitaxy (HVPE).
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Abstract
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
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Citations
11 Claims
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1. A method of growing a planar non-polar III-Nitride epitaxial film, comprising:
- growing non-polar {10-10} m-plane III-Nitride on a suitable sapphire substrate using hydride vapor phase epitaxy (HVPE).
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
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growing non-polar (10-10) III-Nitride on a suitable substrate using hydride vapor phase epitaxy(HVPE), comprising; performing pretreatment of the substrate growing an intermediate layer on the substrate after the annealing step; and growing a planar epitaxial layer of the semi-polar {10-10} m-plane III-Nitride on the recrystallized intermediate layer.
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Specification