Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)

• US 20110108954A1
• Filed: 11/06/2009
• Published: 05/12/2011
• Est. Priority Date: 11/06/2009
• Status: Active Grant

• Current Assignee: Ostendo Technologies Inc.
• Original Assignee: Ostendo Technologies Inc.
• Inventors: Usikov, Alexander, Scanlan, Bernard, Spiberg, Philippe, Soukhoveev, Vitali, Syrkin, Alexander, El-Ghoroury, Hussein S.
• Granted Patent: US 8,629,065 B2
• Time in Patent Office: Days
• US Class Current: 257/615
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: C30B 25/186 being specially pre-treated by, e.g. chemical or physical means
• CPC Class Codes: C30B 29/403 AIII-nitrides

Abstract

A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.

Claims

1. A method of growing a planar non-polar III-Nitride epitaxial film, comprising:

growing non-polar {10-10} m-plane III-Nitride on a suitable sapphire substrate using hydride vapor phase epitaxy (HVPE).

2. The method of claim 1, wherein the substrate comprises an m-Sapphire substrate.

3. The method of claim 1, wherein the non-polar III-Nitride comprises non-polar m-plane gallium nitride (GaN).

4. The method of claim 1, further comprising performing a pretreatment of the substrate prior to the growing of the non-polar {10-10} m-plane III-Nitride.

5. The method of claim 1, further comprising growing an intermediate layer on the substrate and growing the non-polar {10-10} m-plane III-Nitride on the intermediate layer.

6. The method of claim 5, wherein the intermediate layer comprises aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) layer.

7. The method of claim 6 consisting of increasing the temperature in an atmosphere of ammonia and hydrogen to affect the recrystallization of the intermediate layer.

8. The method of claim 1, further comprising:

pretreatment of the substrate;

growing an intermediate layer on the substrate after the pretreatment step;

recrystallization of the intermediate layer; and

growing the non-polar plane III-Nitride on the intermediate layer.

9. The method of claim 1, wherein the non-polar {10-10} m-plane III-Nitride is a planar epitaxial layer.

10. A device, wafer, substrate or template fabricated using the method of claim 1.

11. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:

growing non-polar (10-10) III-Nitride on a suitable substrate using hydride vapor phase epitaxy(HVPE), comprising;

performing pretreatment of the substrate

growing an intermediate layer on the substrate after the annealing step; and

growing a planar epitaxial layer of the semi-polar {10-10} m-plane III-Nitride on the recrystallized intermediate layer.