Integrated Circuit Die Stacks With Rotationally Symmetric Vias
First Claim
1. An integrated circuit die stack comprising:
- a first integrated circuit die mounted upon a substrate, the first die comprising pass-through vias (‘
PTVs’
), each PTV comprising a conductive pathway through the first die with no connection to any circuitry on the first die; and
a second integrated circuit die, identical to the first die, rotated with respect to the first die and mounted upon the first die, with the PTVs in the first die connecting signal lines from the substrate through the first die to through silicon vias (‘
TSVs’
) in the second die, each TSV on the second die comprising a conductive pathway through the second die that is also connected to electronic circuitry on the second die;
the TSVs and PTVs disposed upon each identical die so that the positions of the TSVs and PTVs on each identical die are rotationally symmetrical with respect to the TSVs and PTVs on the other identical die.
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Accused Products
Abstract
An integrated circuit die stack including a first integrated circuit die mounted upon a substrate, the first die including pass-through vias (‘PTVs’) composed of conductive pathways through the first die with no connection to any circuitry on the first die; and a second integrated circuit die, identical to the first die, rotated with respect to the first die and mounted upon the first die, with the PTVs in the first die connecting signal lines from the substrate through the first die to through silicon vias (TSVs'"'"') in the second die composed of conductive pathways through the second die connected to electronic circuitry on the second die; with the TSVs and PTVs disposed upon each identical die so that the positions of the TSVs and PTVs on each identical die are rotationally symmetrical with respect to the TSVs and PTVs on the other identical die.
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Citations
24 Claims
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1. An integrated circuit die stack comprising:
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a first integrated circuit die mounted upon a substrate, the first die comprising pass-through vias (‘
PTVs’
), each PTV comprising a conductive pathway through the first die with no connection to any circuitry on the first die; anda second integrated circuit die, identical to the first die, rotated with respect to the first die and mounted upon the first die, with the PTVs in the first die connecting signal lines from the substrate through the first die to through silicon vias (‘
TSVs’
) in the second die, each TSV on the second die comprising a conductive pathway through the second die that is also connected to electronic circuitry on the second die;the TSVs and PTVs disposed upon each identical die so that the positions of the TSVs and PTVs on each identical die are rotationally symmetrical with respect to the TSVs and PTVs on the other identical die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing an integrated circuit die stack comprising:
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fabricating a plurality of identical integrated circuit dies, each die comprising pass-through-vias (‘
PTVs’
) and through-silicon-vias (‘
TSVs’
) disposed upon each identical die so that the positions of the TSVs and PTVs on each identical die are rotationally symmetrical with respect to the TSVs and PTVs on any other identical die, each PTV comprising a conductive pathway through a die with no connection to any circuitry on the die, each TSV comprising a conductive pathway through a die that is also connected to electronic circuitry on the die;mounting a first one of the identical integrated circuit dies upon a substrate; rotating with respect to the first die a second one of the identical integrated circuit dies; and mounting the second die upon the first die with the PTVs in the first die connecting signal lines from the substrate through the first die to TSVs in the second die. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of operation for an integrated circuit die stack comprising:
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transmitting an alternating current signal from a substrate through a first die mounted upon the substrate to electronic circuitry in a second die in the die stack, the second die identical to the first die, rotated with respect to the first die, and mounted upon the first die; conducting, by the first die, the signal through pass-through vias ('"'"'PTVs'"'"') in the first die toward the second die, each PTV comprising a conductive pathway through the first die with no connection to any circuitry on the first die; and conducting, by the second die, the signal through through silicon vias (‘
TSVs’
) in the second die to the electronic circuitry, each TSV in the second die comprising a conductive pathway through the second die that is also connected to the electronic circuitry on the second die, wherein the TSVs and PTVs are disposed upon each identical die so that the positions of the TSVs and PTVs on each identical die are rotationally symmetrical with respect to the TSVs and PTVs on the other identical die, and the PTVs in the first die connect signal lines from the substrate through the first die to the TSVs in the second die. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification