THIN FILM TRANSISTOR ARRAY PANEL AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME

• US 20110109852A1
• Filed: 05/19/2010
• Published: 05/12/2011
• Est. Priority Date: 11/12/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Yong-Jo, Huh, Chul, Kim, Sung-Hoon, Lee, Yui-Ku, KIM, Jin-Seuk, Cho, Young-Je, Jang, Chang-Soon
• Granted Patent: US 8,363,186 B2
• Time in Patent Office: Days
• US Class Current: 349/108
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133519 Overcoatings
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

A thin film transistor includes: a substrate; a thin film transistor formed on the substrate; a first color filter and a second color filter formed on the thin film transistor and each having a through hole; a capping layer formed on the first color filter and the second color filter; and a pixel electrode formed on the capping layer and connected to the thin film transistor through the through hole, wherein the capping layer formed on the first color filter has a first opening exposing the through hole of the first color filter, the size of the first opening is larger than the size of the through hole, the capping layer formed on the second color filter has a second opening disposed inside the through hole of the second color filter, and the size of the second opening is smaller than the size of the through hole. Accordingly, the capping layer completely covers the green color filter which prevents damage to the green color filter in a dry etching process, and also prevents changes of a color coordinate.

Claims

1. A thin film transistor array panel comprising:

a substrate;

a thin film transistor formed on the substrate;

a first color filter and a second color filter formed on the thin film transistor and the first and second color filters each having a through hole;

a capping layer formed on the first color filter and the second color filter; and

a pixel electrode formed on the capping layer and connected to the thin film transistor through the through hole,

wherein the capping layer formed on the first color filter has a first opening exposing the through hole of the first color filter, the size of the first opening is larger than the size of the through hole,

the capping layer formed on the second color filter has a second opening disposed inside the through hole of the second color filter, and the size of the second opening is smaller than the size of the through hole.

2. The thin film transistor array panel of claim 1, wherein

the first color filter includes a red color filter and a blue color filter, and the second color filter includes a green color filter.

3. The thin film transistor array panel of claim 2, wherein

the first opening of the capping layer formed on the red color filter and the blue color filter exposes the red color filter and the blue color filter near the through hole.

4. The thin film transistor array panel of claim 3, wherein

the second opening of the capping layer formed on the green color filter is smaller than the first opening of the capping layer formed on the red color filter and the blue color filter.

5. The thin film transistor array panel of claim 4, wherein

the first opening of the capping layer formed on the red color filter and the blue color filter overlaps a cutout formed in the pixel electrode.

6. A liquid crystal display comprising:

a thin film transistor;

a color filter formed on the thin film transistor and having a through hole;

a capping layer formed on the color filter;

a pixel electrode formed on the capping layer and connected to the thin film transistor through the through hole;

a common electrode facing the pixel electrode; and

a liquid crystal layer interposed between the pixel electrode and the common electrode,

wherein the color filter includes a red color filter, a green color filter, and a blue color filter,

a first opening of the capping layer formed on the red color filter and the blue color filter encloses a through hole of the red color filter and the blue color filter, and

a second opening of the capping layer formed on the green color filter is formed inside a through hole of the green color filter.

7. The liquid crystal display of claim 6, wherein

a central part of the first opening of the capping layer formed on the red color filter and the blue color filter corresponds to a central part of a cutout of the common electrode.

8. A thin film transistor array panel comprising:

a substrate;

a thin film transistor formed on the substrate;

a first color filter and a second color filter formed on the thin film transistor and the first and second color filters each having a through hole;

a capping layer formed on the first color filter and the second color filter and having an opening; and

a pixel electrode formed on the capping layer and connected to the thin film transistor through the through hole,

wherein the capping layer exposes the portion of the first color filter near the opening, the capping layer completely covers the second color filter, and

a combination of first color filters and the second color filters are arranged on the substrate.

9. The thin film transistor array panel of claim 8, wherein

the first color filter includes a red color filter and a blue color filter, and the second color filter includes a green color filter.

10. The thin film transistor array panel of claim 9, wherein:

the capping layer formed on the red color filter and blue color filter has a first opening that is larger than the through hole; and

the capping layer formed on the green color filter covers the green color filter near the through hole of the green color filter, and has a second opening disposed inside the through hole of the green color filter.

11. The thin film transistor array panel of claim 8, wherein

the first color filter includes a red color filter, a green color filter, and a blue color filter, and the second color filter includes a green color filter.

12. The thin film transistor array panel of claim 11, wherein

a ration of an exposed area of the green color filter exposed through the first opening of the capping layer formed on the green color filter to the entire area of the red color filter, the green color filter, and the blue color filter has a range of 0.001:

1 to 0.003;

1.

13. The thin film transistor array panel of claim 11, wherein

the pixel electrode includes a first sub-pixel electrode and a second sub-pixel electrode separated from each other via a gap interposed therebetween, and

the voltage of the first sub-pixel electrode is higher than the voltage of the second sub-pixel electrode.

14. The thin film transistor array panel of claim 13, wherein

the capping layer corresponding to the first sub-pixel electrode covers the color filter near the through hole and has a second opening positioned inside the through hole of the color filter, and

the capping layer corresponding to the second sub-pixel electrode has a first opening that is larger than the through hole of the color filter.

15. The thin film transistor array panel of claim 14, wherein

the thin film transistor is connected to the pixel electrode through an end portion of the drain electrode, and

the end portion of the drain electrode of the thin film transistor contacted with the pixel electrode through the second opening is smaller than the end portion of the drain electrode of the thin film transistor contacted with the pixel electrode through the first opening.

16. The thin film transistor array panel of claim 15, wherein

a ratio of an exposed area of the green color filter exposed through the first opening of the capping layer formed on the green color filter, to the entire area of the red color filter, the green color filter, and the blue color filter, has a range of 0.001:

1 to 0.003;

1.

17. A thin film transistor array panel comprising:

a substrate; and

a plurality of dots formed on the substrate, each dot including a red pixel, a green pixel, and a blue pixel,

wherein the red pixel, the green pixel, and the blue pixel respectively include a thin film transistor formed on the substrate;

a red color filter, a green color filter, and a blue color filter formed on the thin film transistor and having a through hole;

a capping layer formed on the red color filter, the green color filter, and the blue color filter and having an opening; and

a pixel electrode formed on the capping layer and connected to the thin film transistor through the through hole,

wherein the plurality of dots includes a first dot in which the capping layer exposes a portion of the red color filter and the blue color filter and completely covers the green color filter, and

a second dot in which the capping layer exposes the portion of the red color filter, the blue color filter, and the green color filter, and

a combination of first dots and second dots are disposed on the substrate.

18. The thin film transistor array panel of claim 17, wherein:

the capping layer formed on the red color filter and the blue color filter of the first dot has a first opening exposing the through hole of the red color filter and the blue color filter, and the size of the first opening is larger than the size of the through hole;

the capping layer formed on the green color filter of the first dot covers the green color filter near the through hole of the green color filter, and has a second opening disposed inside the through hole of the green color filter; and

the capping layer formed on the red color filter, the green color filter, and the blue color filter of the second dot has a first opening exposing the through hole of the red color filter, the green color filter, and the blue color filter, and the size of the first opening is larger than the size of the through hole.

19. The thin film transistor array panel of claim 17, wherein the first dot and the second dot are disposed on the substrate with a ratio of 3:

1 to 10;

1.

20. The thin film transistor array panel of claim 18, wherein

A ration of an exposed area of the green color filter exposed through the first opening of the capping layer formed on the green color filter, to the entire area of the red color filter, the green color filter, and the blue color filter, has a range of 0.001:

1 to 0.003;

1.

21. The thin film transistor array panel of claim 17, wherein

the plurality of dots further includes a third dot where the capping layer completely covers the red color filter, the blue color filter, and the green color filter, and

a combination of first dots, second dots, and third dot are disposed on the substrate.

22. The thin film transistor array panel of claim 21, wherein:

the capping layer formed on the red color filter and the blue color filter of the first dot has a first opening exposing the through hole of the red color filter and the blue color filter, and the size of the first opening is larger than the size of the through hole;

the capping layer formed on the green color filter of the first dot covers the green color filter near the through hole of the green color filter, and has a second opening disposed inside the through hole of the green color filter;

the capping layer formed on the red color filter, the green color filter, and the blue color filter of the second dot has a first opening exposing the through hole of the red color filter, the green color filter, and the blue color filter, and the size of the first opening is larger than the size of the through hole; and

the capping layer formed on the red color filter, the green color filter, and the blue color filter of the third dot covers the red color filter, the green color filter, and the blue color filter near the through hole of the red color filter, the green color filter, and the blue color filter, and has a second opening disposed inside the through hole of the red color filter, the green color filter, and the blue color filter.

23. The thin film transistor array panel of claim 21, wherein

a ratio of an exposed area of the green color filter exposed through the first opening of the capping layer formed on the green color filter, to the entire area of the red color filter, the green color filter, and the blue color filter, has a range of 0.001:

1 to 0.003;

1.

24. The thin film transistor array panel of claim 17, wherein:

the pixel electrode includes a first sub-pixel electrode and a second sub-pixel electrode separated from each other via a gap interposed therebetween; and

a voltage of the first sub-pixel electrode is higher than a voltage of the second sub-pixel electrode.

25. The thin film transistor array panel of claim 24, wherein:

the capping layer corresponding to the first sub-pixel electrode covers the color filter near the through hole, and has a second opening disposed inside the through hole of the color filter; and

the capping layer corresponding to the second sub-pixel electrode has a first opening larger than the through hole of the color filter.

26. The thin film transistor array panel of claim 25, wherein:

the thin film transistor is contacted with the pixel electrode through the drain electrode; and

the end portion of the drain electrode of the thin film transistor contacted with the pixel electrode through the second opening is smaller than the end portion of the drain electrode of the thin film transistor contacted with the pixel electrode through the first opening.

27. The thin film transistor array panel of claim 26, wherein

a ratio of an exposed area of the green color filter exposed through the first opening of the capping layer formed on the green color filter, to the entire area of the red color filter, the green color filter, and the blue color filter, has a range of 0.001:

1 to 0.003;

1.