WORD LINE DRIVERS IN NON-VOLATILE MEMORY DEVICE AND METHOD HAVING A SHARED POWER BANK AND PROCESSOR-BASED SYSTEMS USING SAME
First Claim
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1. A method of applying a voltage on word lines of an array of non-volatile memory cells in a non-volatile memory device comprising:
- selecting one of at least two voltages to provide as an output signal depending upon the nature of an operation being performed by the non-volatile memory device; and
selectively applying the output signal to the respective word line of a memory cell in the non-volatile memory device.
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Abstract
A word line driver system that utilizes a voltage selection circuit to supply one of several voltages to an output node coupled to a plurality of word line control circuits. Each word line control circuit is coupled to a respective word line in an array of non-volatile memory cells. The voltage selection circuit may include selectable low pass filters for filtering the supplied voltage supplied to the word lines in the array of memory cells without significantly increasing the overall die-size of the device.
37 Citations
12 Claims
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1. A method of applying a voltage on word lines of an array of non-volatile memory cells in a non-volatile memory device comprising:
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selecting one of at least two voltages to provide as an output signal depending upon the nature of an operation being performed by the non-volatile memory device; and selectively applying the output signal to the respective word line of a memory cell in the non-volatile memory device. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of driving a voltage signal on each word line of an array of non-volatile memory cells in a non-volatile memory comprising:
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filtering a voltage to generate a filtered output voltage signal; and selectively applying the filtered output voltage signal to one of a plurality of word lines in the non-volatile memory device. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification