Burst Mode Linear Optical Receivers

• US 20110110672A1
• Filed: 11/11/2009
• Published: 05/12/2011
• Est. Priority Date: 11/11/2009
• Status: Active Grant

• Current Assignee: Emcore Corporation
• Original Assignee: Emcore Corporation
• Inventors: Blauvelt, Henry A.
• Granted Patent: US 8,190,035 B2
• Time in Patent Office: Days
• US Class Current: 398/202
• CPC Class Codes: H04B 10/693 Arrangements for optimizing the preamplifier in the receiver

Abstract

Techniques are provided for implementing a burst mode optical receiver capable of maintaining a stable gain profile in response to a burst signal. The optical receiver has a photodiode in balanced circuit configuration with a separate RF amplifier stage connected to each terminal of the photodiode. The two RF amplifier stages are coupled to biasing voltage sources that are inverted in comparison to the terminal connections and that, in some examples, each contain a field effect transistor (FET) that having a gate that is controlled in response to a sensed voltage. The burst mode optical receiver may be used in numerous applications, including optical line terminations (OLTs) in passive optical networks (PONs).

Claims

1. An optical receiver comprising:

a photodetector to receive from an external optical fiber an information containing optical communications signal transmitted in time spaced signal bursts and converting such signal bursts into an electrical signal;

a first RF amplifier coupled to a first electrical output of the photodetector for generating a first output signal;

a second RF amplifier coupled to a second electrical output of the photodetector for generating a second output signal;

a capacitor having a capacitance of less than 200 pf and coupling the first electrical output to the first RF amplifier;

a biasing circuit connected to said first and second RF amplifiers for reverse biasing the photodetector; and

a combiner circuit coupled to the output of the first and second RF amplifiers for producing an RF output signal,

wherein the gain of the amplifier is maintained at substantially the same level from approximately the beginning of a signal burst and continuing for a period of at least 100 microseconds after the beginning of the burst.

2. The optical receiver of claim 1, wherein the first RF amplifier comprises a first field effect transistor (FET) and wherein the capacitor is coupled to a gate of the first FET.

3. The optical receiver of claim 2, further comprising a gate control that is coupled to supply a gate bias control signal to the gate of the first FET.

4. The optical receiver of claim 3, wherein the second RF amplifier comprises a second FET and wherein the capacitor is coupled to a gate of the second FET, and wherein the gate control is coupled to supply a gate bias control signal to the gate of the second FET.

5. The optical receiver of claim 1, wherein the biasing circuit comprises a positive voltage bias source coupled to the first RF amplifier, the first RF amplifier being coupled to a cathode of the photodetector, wherein the positive voltage bias is coupled to a drain of a first field effect transistor (FET) within the first RF amplifier.

6. The optical receiver of claim 5, wherein the biasing circuit comprises a negative voltage bias source or ground voltage source coupled to the second RF amplifier, the second RF amplifier being coupled to an anode of the photodetector, wherein the negative voltage bias source or ground voltage source is coupled to a drain of a second FET within the second RF amplifier.

7. The optical receiver of claim 6, wherein the biasing circuit further comprises a reference voltage source and sensing resistor pair each coupled to the first RF amplifier and to the second RF amplifier, respectively, such that a voltage across the sensing resistors indicates a voltage level of the first output signal and the second output signal, respectively.

8. The optical receiver of claim 5, further comprising:

a first biasing inductor coupling the positive voltage bias source to the first FET; and

a second biasing inductor coupling the negative voltage bias source or ground voltage source to the second FET.

9. The optical receiver of claim 8, wherein the first biasing inductor and the second biasing inductor have inductances of 20 pH or above.

10. The optical receiver of claim 1, further comprising another capacitor having a capacitance of less than 200 pf and coupling the second electrical output to the second RF amplifier.

11. The optical receiver of claim 1, further comprising an impedance matching circuit for matching the impedance of the first RF amplifier and the second RF amplifier with that of the combiner.

12. The optical receiver of claim 1, wherein the first RF amplifier is coupled to a cathode of the photodetector.

13. The optical receiver of claim 1, wherein the first RF amplifier is coupled to an anode of the photodetector.

14. A burst mode optical receiver for receiving an information containing optical communications signal transmitted in time spaced signal bursts and converting such signal bursts into an electrical signal comprising:

a photodetector having a positive terminal and a negative terminal;

a first RF amplifier having a low voltage biasing source and coupled to the positive terminal for generating a first output signal;

a second RF amplifier having a high voltage biasing source and coupled to the negative terminal for generating a second output signal; and

a gate bias control circuit coupled to the first RF amplifier and the second RF amplifier, wherein the gate bias control circuit controls gain of each of the first and second RF amplifiers and is configured to, in response to a sensed voltage, maintain gain of the first RF amplifier and the second RF amplifier in response to a signal burst for a period of at least 100 microseconds after the beginning of the signal burst.

15. The burst mode optical receiver of claim 14, wherein the first RF amplifier comprises a first field effect transistor (FET) and wherein the second RF amplifier comprises a second FET.

16. The burst mode optical receiver of claim 15, wherein the gate bias control circuit comprises a first gate capacitor coupling the negative terminal to a gate of the second FET, wherein the first gate capacitor has a capacitance of less than 200 pf.

17. The burst mode optical receiver of claim 16, wherein the gate bias control circuit comprises a second gate capacitor coupling the positive terminal to a gate of the first FET, wherein the second gate capacitor has a capacitance of less than 200 pf.

18. The burst mode optical receiver of claim 15, further comprising

a first biasing inductor coupling the low voltage biasing source to the first FET;

and

a second biasing inductor coupling the high voltage biasing source to the second FET.

19. The burst mode optical receiver of claim 14, wherein the gate bias control circuit is configured to maintain the gain of the first RF amplifier and the gain of the second RF amplifier within 20% of an steady state gain in response to a signal burst.

20. The burst mode optical receiver of claim 19, wherein the gate bias control circuit is configured to reach a steady state gain for the first RF amplifier and for the second RF amplifier in less than 5 μ

s.