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Solar Cell Fabrication Using Extruded Dopant-Bearing Materials

  • US 20110111076A1
  • Filed: 01/20/2011
  • Published: 05/12/2011
  • Est. Priority Date: 12/12/2006
  • Status: Active Grant
First Claim
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1. A system for fabricating a wafer-based semiconductor device on a substrate, the system comprising:

  • means for extruding a first dopant bearing paste and a second dopant bearing paste on a surface of the semiconductor substrate such that the first dopant bearing paste forms a first extruded structure on a first surface area of the semiconductor substrate, and such that the second dopant bearing paste forms a second extruded structure on a second surface area of the semiconductor substrate, wherein the first and second surface areas are separated by a third surface area, and wherein the first dopant bearing paste includes a first dopant of a first dopant type, and the second dopant bearing paste includes a second dopant of a second dopant type andmeans for heating the semiconductor substrate such that the first dopant diffuses through the first surface area into the semiconductor substrate, thereby forming a first doped region, and such that the second dopant diffuses through the second surface area into the semiconductor substrate, thereby forming a second doped region.

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