SEMICONDUCTOR CARBON NANOTUBES AND METHOD OF SELECTIVELY GROWING SEMICONDUCTOR CARBON NANOTUBES USING LIGHT IRRADIATION

• US 20110111577A1
• Filed: 09/10/2010
• Published: 05/12/2011
• Est. Priority Date: 11/12/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: ZHANG, Jin, HONG, Guo, CHOI, Won-mook, CHOI, Jae-young
• Granted Patent: US 8,759,199 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 2202/22 Electronic properties
• CPC Class Codes: C01B 32/162 characterised by catalysts

Abstract

A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation. The method includes disposing a plurality of nanodots, which include a catalyst material, on a substrate; growing a plurality of carbon nanotubes from the plurality of nanodots, and irradiating light onto the nanodot to selectively grow the plurality of semiconductor carbon nanotubes.

Claims

1. A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation, the method comprising:

disposing a plurality of nanodots, which comprise a catalyst material, on a substrate;

growing a plurality of carbon nanotubes from the plurality of nanodots; and

irradiating light onto the plurality of nanodots to selectively grow the semiconductor carbon nanotubes.

2. The method of claim 1, wherein the substrate is a sapphire substrate, and the plurality of carbon nanotubes grow in a direction which is substantially parallel to a crystallographic direction of the substrate.

3. The method of claim 2, wherein the disposing of the plurality of the nanodots comprises disposing the plurality of nanodots in a row in a first direction, which is perpendicular to the crystallographic direction of the substrate.

4. The method of claim 3, wherein the irradiating light onto the plurality of nanodots comprises irradiating light on to the substrate through a slit which is elongated in the first direction.

5. The method of claim 4, wherein the irradiating light onto the plurality of nanodots further comprises irradiating an ultraviolet ray having a wavelength of about 10 nanometers to about 1000 nanometers.

6. The method of claim 5, wherein the irradiating light onto the plurality of nanodots further comprises irradiating an ultraviolet ray having a wavelength of about 10 nanometers to about 400 nanometers.

7. The method of claim 4, wherein the irradiating light onto the plurality of nanodots further comprises:

disposing the slit above an interface between the plurality of nanodots and the plurality of carbon nanotubes; and

irradiating a light through the slit and onto the interface.

8. The method of claim 1, wherein at least one of the growing of plurality of the carbon nanotubes or the selectively growing the plurality of semiconductor carbon nanotubes comprises contacting the plurality of nanodots with a carbonaceous material, wherein the carbonaceous material is acetylene, ethylene, ethanol, methane, or a combination comprising at least one of the foregoing.

9. An apparatus for selectively growing a plurality of semiconductor carbon nanotubes, the apparatus comprising:

a reaction chamber having a slit;

a substrate disposed in the reaction chamber; and

a plurality of nanodots disposed on the substrate in a region corresponding to the slit,

wherein the slit is elongated in a direction perpendicular to a crystallographic direction of the substrate.

10. The apparatus of claim 9, further comprising an ultraviolet light.

11. The apparatus of claim 10, wherein the ultraviolet light is irradiated through the slit and onto the substrate.

12. The apparatus of claim 9, wherein the slit is elongated in a direction perpendicular to a crystallographic direction of the substrate.

13. The apparatus of claim 9, wherein the plurality of nanodots are disposed in a row.

14. The apparatus of claim 13, wherein the row is disposed in a direction perpendicular to a crystallographic direction of the substrate.

15. The apparatus of claim 13, wherein the row is disposed in a direction which is parallel to a direction in which the slit is elongated.

16. The apparatus of claim 13, wherein the row is disposed in a region corresponding to the slit.