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METHODS FOR PURIFYING METALLURGICAL SILICON

  • US 20110114012A1
  • Filed: 11/16/2010
  • Published: 05/19/2011
  • Est. Priority Date: 11/16/2009
  • Status: Active Grant
First Claim
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1. A method for purifying silicon bearing materials for photovoltaic applications, the method comprising:

  • providing metallurgical silicon into a crucible apparatus;

    subjecting the metallurgical silicon to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius;

    causing at least a first portion of impurities to be removed from the metallurgical silicon in the molten state;

    cooling the molten metallurgical silicon from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region;

    solidifying the liquid state region to form a resulting silicon structure having a purified region and an impurity region; and

    whereupon the purified region is characterized by a purity of greater than 99.9999%.

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