PHOTOVOLTAIC MODULES HAVING A BUILT-IN BYPASS DIODE AND METHODS FOR MANUFACTURING PHOTOVOLTAIC MODULES HAVING A BUILT-IN BYPASS DIODE

• US 20110114156A1
• Filed: 12/08/2010
• Published: 05/19/2011
• Est. Priority Date: 06/10/2009
• Status: Abandoned Application

• Current Assignee: Thinsilicon Corporation
• Original Assignee: Thinsilicon Corporation
• Inventors: Stephens, Jason, Hussen, Guleid, Coakley, Kevin
• Application Number:
  US12/963,424
• Publication Number:
  US 20110114156A1
• Time in Patent Office: Days
• US Class Current: 136/249
• CPC Class Codes: H01L 27/1421 comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
• CPC Class Codes: H01L 31/02366 of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0463 characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/1824 Special manufacturing methods for microcrystalline Si, uc-Si
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/545 Microcrystalline silicon PV cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A photovoltaic device includes: a substrate; lower and upper electrode layers disposed above the substrate; and a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing incident light to excite electrons from the semiconductor layer, wherein the semiconductor layer includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers, the bypass diode permitting electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.

Claims

1. A photovoltaic device comprising:

a substrate;

lower and upper electrode layers disposed above the substrate; and

a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing incident light to excite electrons from the semiconductor layer, wherein the semiconductor layer includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers, the bypass diode permitting electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.

2. The photovoltaic device of claim 1, wherein the bypass diode extends from an upper surface of the semiconductor layer to an opposite interface of the semiconductor layer.

3. The photovoltaic device of claim 1, wherein the bypass diode is disposed within the semiconductor layer between the upper and lower electrode layers.

4. The photovoltaic device of claim 1, wherein a localized region of the semiconductor layer that includes the bypass diode has a greater crystallinity than volumes of the semiconductor layer that are outside of the localized region.

5. The photovoltaic device of claim 1, wherein the bypass diode has a smaller breakdown voltage than other volumes of the semiconductor layer.

6. The photovoltaic device of claim 1, wherein the bypass diode extends through the semiconductor layer from the lower electrode layer to a scribe line disposed above the semiconductor layer along a direction that light is received into the semiconductor layer and that separates the upper electrode layer into sections.

7. The photovoltaic device of claim 1, wherein the bypass diode permits the electric current to flow through the bypass diode instead of through the semiconductor layer.

8. A method for manufacturing a photovoltaic device, the method including:

depositing a lower electrode layer above a substrate, a semiconductor layer above the lower electrode layer, and an upper electrode layer above the semiconductor layer, the semiconductor layer configured to absorb incident light to excite electrons from the semiconductor layer; and

increasing at least one of a crystallinity or a diffusion of dopants in the semiconductor layer between the lower electrode layer and the upper electrode layer to form a built-in bypass diode, the bypass diode configured to permit electric current to flow through the bypass diode when a reverse bias is applied across the lower and upper electrode layers.

9. The method of claim 8, wherein the increasing operation comprises exposing the semiconductor layer to a focused beam of energy.

10. The method of claim 8, wherein the increasing operation comprises exposing the semiconductor layer to a focused beam of energy that also separates the upper electrode layer into separate sections.

11. The method of claim 8, wherein the increasing operation comprises forming a scribe line in the upper electrode layer and directing a focused beam of energy into the semiconductor layer within the scribe line.

12. The method of claim 11, wherein the scribe lines are formed as elongated lines that separate the upper electrode layer into sections and the focused beam of energy is directed at separate scribe marks on the semiconductor layer that are spaced apart from each other.

13. The method of claim 8, wherein the increasing operation comprises exposing the semiconductor layer to a plurality of laser lights.

14. The method of claim 8, wherein the increasing operation comprises exposing the semiconductor layer to an initial focused beam of energy that increases the at least one of the crystallinity or the diffusion of dopants in a localized region of the semiconductor layer and exposing the semiconductor layer to a subsequent focused beam of energy that further increases the at least one of the crystallinity or the diffusion of dopants in the localized region.

15. The method of claim 8, wherein the increasing operation comprises forming the bypass diode in the semiconductor layer by exposing the semiconductor layer to a first focused beam of energy and reducing a reverse breakdown voltage of the bypass diode by exposing the semiconductor layer to a second focused beam of energy.

16. A photovoltaic device comprising:

a substrate; and

a plurality of electrically coupled photovoltaic cells disposed above the substrate in a direction that incident light is received by the photovoltaic cells, the photovoltaic cells generating electric current based on the light that is received by the photovoltaic cells, each of the photovoltaic cells including;

lower and upper electrode layers disposed above the substrate; and

a semiconductor layer disposed between the lower and upper electrode layers, the semiconductor layer absorbing the light to excite electrons from the semiconductor layer,

wherein the semiconductor layer of at least one of the photovoltaic cells includes a built-in bypass diode extending between and coupled with the lower and upper electrode layers of the at least one of the photovoltaic cells, the bypass diode permitting the electric current to flow between neighboring ones of the photovoltaic cells through the bypass diode when the at least one of the photovoltaic cells is reverse biased.

17. The photovoltaic device of claim 16, wherein the bypass diode is disposed within the semiconductor layer of the at least one of the photovoltaic cells between the upper and lower electrode layers.

18. The photovoltaic device of claim 16, wherein a localized region of the semiconductor layer of the at least one of the photovoltaic cells that includes the bypass diode has a greater crystallinity than volumes of the semiconductor layer that are outside of the localized region.

19. The photovoltaic device of claim 16, wherein the upper electrode layers of the photovoltaic cells are separated by a scribe line, the bypass diode extending from the scribe line to the lower electrode layer of the semiconductor layer in the at least one of the photovoltaic cells.

20. The photovoltaic device of claim 16, wherein the bypass diode permits the electric current to flow through the bypass diode instead of through the semiconductor layer of the at least one of the photovoltaic cells.