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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20110114942A1
  • Filed: 11/10/2010
  • Published: 05/19/2011
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and

    a source electrode and a drain electrode which are in contact with the oxide semiconductor film,wherein the source electrode and the drain electrode include a metal with a lower electronegativity than an electronegativity of hydrogen, andwherein a concentration of hydrogen in the source electrode and the drain electrode is greater than or equal to 1.2 times as high as a concentration of hydrogen in the oxide semiconductor film.

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