SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a gate electrode;
an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and
a source electrode and a drain electrode which are in contact with the oxide semiconductor film,wherein the source electrode and the drain electrode include a metal with a lower electronegativity than an electronegativity of hydrogen, andwherein a concentration of hydrogen in the source electrode and the drain electrode is greater than or equal to 1.2 times as high as a concentration of hydrogen in the oxide semiconductor film.
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Abstract
It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.
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Citations
30 Claims
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1. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film, wherein the source electrode and the drain electrode include a metal with a lower electronegativity than an electronegativity of hydrogen, and wherein a concentration of hydrogen in the source electrode and the drain electrode is greater than or equal to 1.2 times as high as a concentration of hydrogen in the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode, wherein each of the source electrode and the drain electrode includes a first conductive film in contact with the oxide semiconductor film, and a second conductive film in contact with the first conductive film, wherein the first conductive film includes a metal with a lower electronegativity than an electronegativity of hydrogen, and wherein a concentration of hydrogen in the first conductive film is greater than or equal to 1.2 times as high as a concentration of hydrogen in the oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film, wherein the source electrode and the drain electrode include a metal with a lower electronegativity than an electronegativity of hydrogen, and wherein a concentration of hydrogen in the source electrode and the drain electrode is greater than or equal to 5 times as high as a concentration of hydrogen in the oxide semiconductor film. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. A semiconductor device comprising:
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a gate electrode; an oxide semiconductor film adjacent to the gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode, wherein each of the source electrode and the drain electrode includes a first conductive film in contact with the oxide semiconductor film, and a second conductive film in contact with the first conductive film, wherein the first conductive film includes a metal with a lower electronegativity than an electronegativity of hydrogen, and wherein a concentration of hydrogen in the first conductive film is greater than or equal to 5 times as high as a concentration of hydrogen in the oxide semiconductor film. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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Specification