SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF, AND TRANSISTOR
First Claim
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1. A sputtering target comprising:
- a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein the sintered body is subjected to a heat treatment after cleaning the sintered body, andwherein a concentration of hydrogen contained in the sintered body is lower than 1×
1016 atoms/cm3.
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Abstract
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
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Citations
18 Claims
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1. A sputtering target comprising:
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a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide, wherein the sintered body is subjected to a heat treatment after cleaning the sintered body, and wherein a concentration of hydrogen contained in the sintered body is lower than 1×
1016 atoms/cm3. - View Dependent Claims (2, 3)
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4. A transistor comprising an oxide semiconductor layer which is formed using a sputtering target,
wherein the sputtering target includes at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide, wherein a concentration of hydrogen contained in the oxide semiconductor layer is lower than 1× - 1016 atoms/cm3.
- View Dependent Claims (5, 6)
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7. A manufacturing method of a sputtering target, comprising the steps of:
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mixing and baking a plurality of metal oxides to form a sintered body; performing a mechanical processing on the sintered body so as to form a target; cleaning the target; and performing a heat treatment on the cleaned target. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A manufacturing method of a sputtering target, comprising the steps of:
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mixing and baking a plurality of metal oxides to form a sintered body; performing a mechanical processing on the sintered body so as to form a target; cleaning the target; performing a heat treatment on the cleaned target; and attaching the target to a backing plate. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification