SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a first transistor including;
impurity regions provided in a substrate including a semiconductor material;
a channel formation region between the impurity regions;
a first gate insulating layer over the channel formation region;
a first gate electrode over the first gate insulating layer; and
a first source electrode and a first drain electrode electrically connected to the impurity regions; and
a second transistor including;
an oxide semiconductor layer over the substrate including the semiconductor material;
a second source electrode and a second drain electrode electrically connected to the oxide semiconductor layer;
a second gate insulating layer covering the oxide semiconductor layer, the second source electrode, and the second drain electrode; and
a second gate electrode over the second gate insulating layer,wherein the second source electrode and the second drain electrode include an oxide region at a side surface of the second source electrode and the second drain electrode, andwherein at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode.
-
Citations
16 Claims
-
1. A semiconductor device comprising:
-
a first transistor including; impurity regions provided in a substrate including a semiconductor material; a channel formation region between the impurity regions; a first gate insulating layer over the channel formation region; a first gate electrode over the first gate insulating layer; and a first source electrode and a first drain electrode electrically connected to the impurity regions; and a second transistor including; an oxide semiconductor layer over the substrate including the semiconductor material; a second source electrode and a second drain electrode electrically connected to the oxide semiconductor layer; a second gate insulating layer covering the oxide semiconductor layer, the second source electrode, and the second drain electrode; and a second gate electrode over the second gate insulating layer, wherein the second source electrode and the second drain electrode include an oxide region at a side surface of the second source electrode and the second drain electrode, and wherein at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A manufacturing method of a semiconductor device, comprising the steps of:
-
forming a first transistor, the steps of forming the first transistor comprising; forming a gate insulating layer over a substrate including a semiconductor material forming a gate electrode over the gate insulating layer; forming a channel formation region and impurity regions by adding an impurity element to the substrate including the semiconductor material; and forming a first source electrode and a first drain electrode electrically connected to the impurity regions; and forming a second transistor, the steps of forming the second transistor comprising; forming an oxide semiconductor layer over the first transistor; forming a second source electrode and a second drain electrode electrically connected to the oxide semiconductor layer; oxidizing a side surface of the second source electrode and the second drain electrode; forming a second gate insulating layer covering the oxide semiconductor layer, the second source electrode, and the second drain electrode; and forming a second gate electrode over the second gate insulating layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
Specification