SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE

• US 20110115003A1
• Filed: 11/03/2010
• Published: 05/19/2011
• Est. Priority Date: 11/17/2009
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kawashima, Toshitaka, Okita, Hiroyuki
• Granted Patent: US 8,624,305 B2
• Time in Patent Office: Days
• US Class Current: 257/291
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H10K 39/32 Organic image sensors

Abstract

A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.

Claims

1. A solid-state imaging device, comprising:

a photoelectric conversion portion that is provided above an imaging surface of a substrate; and

a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface;

wherein

the photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film,

the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface,

each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and

the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.

2. The solid-state imaging device according to claim 1, wherein

the photoelectric conversion portion is provided in plural number in a layered fashion above the imaging surface of the substrate, and

the readout circuit portions are provided respectively below the plurality of photoelectric conversion portions on the imaging surface.

3. The solid-state imaging device according to claim 2, wherein the readout circuit is formed to transmit light therethrough.

4. The solid-state imaging device according to claim 3, further comprising:

a dielectric film that is sandwiched between the first electrode and the ground electrode;

wherein

a capacitor composed of the first electrode, the ground electrode, and the dielectric film is configured to accumulate the signal charge produced by the photoelectric conversion film.

5. The solid-state imaging device according to claim 4, wherein

the plurality of photoelectric conversion portions include

a first photoelectric conversion portion that receives light in a first wavelength region and produces a signal charge,

a second photoelectric conversion portion that receives light in a second wavelength region, the second wavelength region being different from the first wavelength region, in light incident through the first photoelectric conversion portion and produces a signal charge, and

a third photoelectric conversion portion that receives light in a third wavelength region, the third wavelength region being different from the first and second wavelength regions, in light incident through the second photoelectric conversion portion and produces a signal charge, and

the plurality of readout circuit portions include

a first readout circuit portion that reads out the signal charge produced by the first photoelectric conversion portion,

a second readout circuit portion that reads out the signal charge produced by the second photoelectric conversion portion, and

a third readout circuit portion that reads out the signal charge produced by the third photoelectric conversion portion.

6. The solid-state imaging device according to claim 5, wherein

the first photoelectric conversion portion receives light in a blue wavelength region,

the second photoelectric conversion portion receives light in a green wavelength region, and

the third photoelectric conversion portion receives light in a red wavelength region.

7. A method for manufacturing a solid-state imaging device comprising the step of:

manufacturing a solid-state imaging device in which a photoelectric conversion portion is provided above an imaging surface of a substrate and a readout circuit portion is provided below the photoelectric conversion portion;

wherein

the step of manufacturing a solid-state imaging device includes the steps of

forming the photoelectric conversion portion, and

forming the readout circuit portion,

in the step of forming the photoelectric conversion portion, a first electrode, a photoelectric conversion film that receives incident light and produces a signal charge, and a second electrode are sequentially formed to be layered in such a manner that the first electrode and the second electrode sandwich the photoelectric conversion film, above the imaging surface, and

in the step of forming the readout circuit portion, the readout circuit portion and a ground electrode that is grounded are formed in a manner that the ground electrode is interposed between a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion and the first electrode.

8. An electronic device, comprising:

a solid-state imaging device that includes a photoelectric conversion portion provided above an imaging surface of a substrate and a readout circuit portion provided below the photoelectric conversion portion on the imaging surface;

wherein

the photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film,

the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface,

the readout circuit portion includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and

the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.