THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

• US 20110115010A1
• Filed: 11/10/2010
• Published: 05/19/2011
• Est. Priority Date: 11/17/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Hoosung, Jang, Jaehoon, Shim, Sunil, Hur, Sunghoi, Kim, Hansoo
• Granted Patent: US 8,395,190 B2
• Time in Patent Office: Days
• US Class Current: 257/314
• CPC Class Codes: H01L 21/02365 Forming inorganic semiconducting materials on a substrate for light-sensitive devices H01L31/00
• CPC Class Codes: H01L 21/02697 Forming conducting materials on a substrate
• CPC Class Codes: H10B 43/10 characterised by the top-view layout
• CPC Class Codes: H10B 43/20 characterised by three-dimensional arrangements, e.g. with cells on different height levels
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/50 characterised by the boundary region between the core and peripheral circuit regions

Abstract

Provided is a three-dimensional semiconductor memory device. The three-dimensional semiconductor memory device includes a substrate that has a cell array region including a pair of sub-cell regions and a strapping region interposed between the pair of sub-cell regions. A Plurality of sub-gates are sequentially stacked on the substrate in each of the sub-cell regions, and interconnections are electrically connected to extensions of the stacked sub-gates, respectively, which extend into the strapping region. Each of the interconnections is electrically connected to the extensions of the sub-gate which are disposed in the pair of the sub-cell regions, respectively, and which are located at the same level.

Claims

1. A three-dimensional semiconductor memory device comprising:

a substrate comprising a cell array region including a pair of sub-cell regions and a strapping region between the pair of sub-cell regions;

a plurality of sub-gates sequentially stacked on the substrate in each of the sub-cell regions, each of the sub-gates including an extension extending laterally into the strapping region;

a vertical-type channel pattern successively penetrating the stacked sub-gates within each of the sub-cell regions; and

interconnections electrically connected to the extensions of the stacked sub-gates, respectively, each of the interconnections being electrically connected to the extensions of sub-gates which are disposed in the pair of the sub-cell regions, respectively, and are located at the same level.

2. The three-dimensional semiconductor memory device of claim 1, wherein the extensions of the stacked sub-gates are in a shape of a terraced structure.

3. The three-dimensional semiconductor memory device of claim 1, wherein the interconnections are located at the same level.

4. The three-dimensional semiconductor memory device of claim 1, wherein an interconnection electrically connected to an extension of the uppermost sub-gate in the stacked sub-gates is located at a different level from other interconnections.

5. The three-dimensional semiconductor memory device of claim 1, further comprising:

a data storage layer interposed between the vertical-type channel pattern and the sub-gates; and

a bitline electrically connected to a top end of the vertical-type channel pattern,

wherein the interconnection extends into the sub-cell region and crosses over the bitline.

6. The three-dimensional semiconductor memory device of claim 1, further comprising:

a data storage layer interposed between the vertical-type channel pattern and the sub-gates; and

a conductive line electrically connected to a part of a top surface of the substrate and extending in a direction perpendicular to a longitudinal direction of the interconnection,

wherein the interconnections are disposed in the strapping region.

7. A three-dimensional semiconductor memory device comprising:

a substrate comprising a cell array region including a first sub-cell region, a second sub-cell region, and a strapping region interposed between the first and second sub-cell regions;

a plurality of first sub-gates being sequentially stacked on the substrate of the first sub-cell region, each of the first sub-gates including an extension extending laterally into the strapping region;

a plurality of second sub-gates being sequentially stacked on the substrate of the second sub-cell region, each of the second sub-gates including an extension extending laterally into the strapping region;

a first vertical-type channel pattern penetrating the stacked first sub-gates within the first sub-cell regions and a second vertical-type channel pattern penetrating the stacked second sub-gates within the second sub-cell regions;

a first bitline and a second bitline electrically connected to top ends of the first and second vertical-type channel patterns, respectively, the first and second bitlines being parallel to each other; and

a plurality of strapping lines crossing over the first and second bitlines, wherein each of the strapping lines is electrically connected to the extension of the first sub-gate and the extension of the second sub-gates which are located at the same level.

8. The three-dimensional semiconductor memory device of claim 7, wherein the stacked first sub-gates and the stacked second sub-gates have a line shape extending in one direction,

the stacked first sub-gates, the stacked second sub-gates, the first vertical-type channel pattern, and the second vertical-type channel pattern are included in a vertical-type string group, and

the vertical-type string group is provided in plural in the cell array region, and a plurality of the vertical-type string groups are disposed in parallel with each other.

9. The three-dimensional semiconductor memory device of claim 8, wherein the strapping lines include a plurality of first strapping lines and a plurality of second strapping lines,

each of the first strapping lines is electrically connected to an extension of an uppermost first sub-gate and an extension of an uppermost second sub-gate, which are within each of the vertical-type string groups, and

each of the second strapping lines is electrically connected to extensions of first sub-gates and extensions of second sub-gates which are below the extensions of the uppermost first and second sub-gates in the vertical-type string groups and are located at the same level.

10. The three-dimensional semiconductor memory device of claim 9, wherein the extensions of the stacked first sub-gates are in a shape of a terraced structure and the extensions of the stacked second sub-gates are in a shape of a terraced structure in each of the vertical-type string groups.

11. The three-dimensional semiconductor memory device of claim 9, further comprising:

first local interconnections and second local interconnections disposed in the strapping region and being parallel to the first and second bitlines,

wherein each of the first local interconnections is electrically connected to the extensions of the first sub-gates which are disposed below the uppermost first sub-gate and are located at the same level,

each of the second local interconnections is electrically connected to the extensions of the second sub-gates which are disposed below the uppermost second sub-gate and are located at the same level, and

each of the second strapping lines is electrically connected to first local interconnection and second local interconnection electrically connected to the extensions of the first sub-gates and the extensions of the second sub-gates which are located at the same level.

12. The three-dimensional semiconductor memory device of claim 11, wherein the first and second local interconnections are located at the same level as the first and second bitlines.

13. The three-dimensional semiconductor memory device of claim 9,

wherein the first strapping lines and the second strapping lines are located at the same level.

14. The three-dimensional semiconductor memory device of claim 9,

wherein the first strapping lines are located at a different level from the second strapping lines.

15. The three-dimensional semiconductor memory device of claim 9,

wherein the first strapping lines are disposed at equal intervals, and

one or more of the second strapping lines are disposed between a pair of the first strapping lines adjacent to each other.

16. The three-dimensional semiconductor memory device of claim 9,

wherein the first strapping lines include a plurality of line groups,

each of the line groups is configured to have a pair of first strapping lines spaced apart from each other at a first interval,

the plurality of line groups being spaced apart from each other at a second interval shorter than the first interval, and

the second strapping line disposed between the line groups adjacent to each other are less in number than the second strapping lines disposed between the pair of first strapping lines which are spaced apart from each other at the first interval.

17. The three-dimensional semiconductor memory device of claim 9, wherein at least one of the first strapping lines is not overlapped with the uppermost first sub-gate and the uppermost second sub-gate that are electrically connected to the at least one of the first strapping lines.

18. The three-dimensional semiconductor memory device of claim 9, wherein the substrate further includes an external region located at one side of the cell array region, some of the second strapping lines are located in the external region.

19. The three-dimensional semiconductor memory device of claim 7, further comprising:

a data storage layer interposed between the first vertical-type channel pattern and the stacked first sub-gates and between the second vertical-type channel pattern and the stacked second sub-gates;

dielectric patterns interposed between the stacked first sub-gates and between the stacked second sub-gates;

a well region formed in the substrate of the cell array region and doped with a first-type dopant;

drain regions formed in top parts of the first and second vertical-type channel patterns and doped with a second-type dopant; and

a common source region formed in the well region and doped with the second-type dopant.

20. The three-dimensional semiconductor memory device of claim 19, further comprising:

a conductive line in the strapping region, the conductive line being in parallel with the first and second bitlines and being electrically connected to a part of a top surface of the substrate.

21-33. -33. (canceled)