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SEMICONDUCTOR DEVICE

  • US 20110115545A1
  • Filed: 11/10/2010
  • Published: 05/19/2011
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • first to ninth insulated gate transistors;

    a capacitor;

    a first wiring to which a first high power supply potential is supplied;

    a second wiring to which a second high power supply potential is supplied;

    a third wiring to which a first low power supply potential is supplied; and

    a fourth wiring to which a second low power supply potential is supplied,wherein a gate of the first insulated gate transistor is electrically connected to an input terminal, a first terminal of the first insulated gate transistor is electrically connected to the third wiring, and a second terminal of the first insulated gate transistor is electrically connected to a first terminal of the second insulated gate transistor,wherein a gate of the second insulated gate transistor is electrically connected to a first terminal of the seventh insulated gate transistor and a first terminal of the eighth insulated gate transistor; and

    a second terminal of the second insulated gate transistor is electrically connected to a first terminal of the third insulated gate transistor, a first terminal of the fourth insulated gate transistor, and a gate of the sixth insulated gate transistor,wherein a gate of the third insulated gate transistor is electrically connected to the first wiring, and a second terminal of the third insulated gate transistor is electrically connected to the second wiring,wherein a gate of the fourth insulated gate transistor is electrically connected to a first terminal of the fifth insulated gate transistor, a first terminal of the sixth insulated gate transistor, a first electrode of the capacitor, a gate of the eighth insulated gate transistor, and a gate of the ninth insulated gate transistor; and

    a second terminal of the fourth insulated gate transistor is electrically connected to the third wiring,wherein a gate of the fifth insulated gate transistor is electrically connected to the first wiring, and a second terminal of the fifth insulated gate transistor is electrically connected to the second wiring,wherein a second terminal of the sixth insulated gate transistor is electrically connected to the third wiring,wherein a gate of the seventh insulated gate transistor is electrically connected to the first wiring, and a second terminal of the seventh insulated gate transistor is electrically connected to the second wiring,wherein a second terminal of the eighth insulated gate transistor is electrically connected to the third wiring,wherein a first terminal of the ninth insulated gate transistor is electrically connected to an output terminal, and a second terminal of the ninth insulated gate transistor is electrically connected to the fourth wiring, andwherein a second electrode of the capacitor is electrically connected to the third wiring.

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