SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20110115763A1
• Filed: 01/25/2011
• Published: 05/19/2011
• Est. Priority Date: 07/31/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SHIRAISHI, Kojiro, AKIMOTO, Kengo, YAMAZAKI, Shunpei, MIYAIRI, Hidekazu
• Granted Patent: US 8,729,544 B2
• Time in Patent Office: Days
• US Class Current: 345/204
• CPC Class Codes: H01L 21/46 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 manufacture of electrodes thereon H01L21/44
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Claims

1. A semiconductor device comprising:

a driver circuit comprising;

a driver IC;

a first transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the driver IC;

a second transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the second transistor is electrically connected to the first terminal of the driver IC;

a third transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the third transistor is electrically connected to a second terminal of the driver IC;

a fourth transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the fourth transistor is electrically connected to the second terminal of the driver IC;

a first wiring electrically connected to a gate of the first transistor and a gate of the third transistor; and

a second wiring electrically connected to a gate of the second transistor and a gate of the fourth transistor.

2. The semiconductor device according to claim 1, further comprising:

a first signal line electrically connected to the other one of the source and the drain of the first transistor;

a second signal line electrically connected to the other one of the source and the drain of the second transistor;

a third signal line electrically connected to the other one of the source and the drain of the third transistor; and

a fourth signal line electrically connected to the other one of the source and the drain of the fourth transistor.

3. The semiconductor device according to claim 1, further comprising:

a pixel portion,

wherein the driver circuit is a signal line driver electrically connected to the pixel portion.

4. The semiconductor device according to claim 3, further comprising:

a scanning line driver circuit electrically connected to the pixel portion.

5. The semiconductor device according to claim 4, further comprising:

a second scanning line driver circuit electrically connected to the pixel portion,

wherein the pixel portion is provided between the scanning line driver circuit and the second scanning line driver circuit.

6. The semiconductor device according to claim 4, wherein the scanning line driver circuit comprises a thin film transistor comprising a channel formation region comprising an oxide semiconductor including indium.

7. The semiconductor device according to claim 1, wherein the first transistor comprises:

a source electrode and a drain electrode;

a first metal oxide layer between the channel formation region and the source electrode; and

a second metal oxide layer between the channel formation region and the drain electrode.

8. The semiconductor device according to claim 1, wherein the oxide semiconductor of each of the first to the fourth transistor further comprises gallium and zinc.

9. A semiconductor device comprising:

a driver circuit comprising;

a driver IC on a single crystal substrate;

a first transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the driver IC;

a second transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the second transistor is electrically connected to the first terminal of the driver IC;

a third transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the third transistor is electrically connected to a second terminal of the driver IC;

a fourth transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the fourth transistor is electrically connected to the second terminal of the driver IC;

a first wiring electrically connected to a gate of the first transistor and a gate of the third transistor; and

a second wiring electrically connected to a gate of the second transistor and a gate of the fourth transistor.

10. The semiconductor device according to claim 9, further comprising:

a first signal line electrically connected to the other one of the source and the drain of the first transistor;

a second signal line electrically connected to the other one of the source and the drain of the second transistor;

a third signal line electrically connected to the other one of the source and the drain of the third transistor; and

a fourth signal line electrically connected to the other one of the source and the drain of the fourth transistor.

11. The semiconductor device according to claim 9, further comprising:

a pixel portion,

wherein the driver circuit is a signal line driver electrically connected to the pixel portion.

12. The semiconductor device according to claim 11, further comprising:

a scanning line driver circuit electrically connected to the pixel portion.

13. The semiconductor device according to claim 12, further comprising:

a second scanning line driver circuit electrically connected to the pixel portion,

wherein the pixel portion is provided between the scanning line driver circuit and the second scanning line driver circuit.

14. The semiconductor device according to claim 12, wherein the scanning line driver circuit comprises a thin film transistor comprising a channel formation region comprising an oxide semiconductor including indium.

15. The semiconductor device according to claim 9, wherein the first transistor comprises:

a source electrode and a drain electrode;

a first metal oxide layer between the channel formation region and the source electrode; and

a second metal oxide layer between the channel formation region and the drain electrode.

16. The semiconductor device according to claim 9, wherein the oxide semiconductor of each of the first to the fourth transistor further comprises gallium and zinc.

17. A semiconductor device comprising:

a driver circuit comprising;

a driver IC;

a first transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the driver IC;

a second transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the second transistor is electrically connected to the first terminal of the driver IC;

a third transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the third transistor is electrically connected to the first terminal of the driver IC;

a fourth transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the fourth transistor is electrically connected to a second terminal of the driver IC;

a fifth transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the fifth transistor is electrically connected to the second terminal of the driver IC;

a sixth transistor comprising a channel formation region comprising an oxide semiconductor including indium, wherein one of a source and a drain of the sixth transistor is electrically connected to the second terminal of the driver IC;

a first wiring electrically connected to a gate of the first transistor and a gate of the fourth transistor;

a second wiring electrically connected to a gate of the second transistor and a gate of the fifth transistor, and

a third wiring electrically connected to a gate of the third transistor and a gate of the sixth transistor.

18. The semiconductor device according to claim 17, further comprising:

a first signal line electrically connected to the other one of the source and the drain of the first transistor;

a second signal line electrically connected to the other one of the source and the drain of the second transistor;

a third signal line electrically connected to the other one of the source and the drain of the third transistor;

a fourth signal line electrically connected to the other one of the source and the drain of the fourth transistor;

a fifth signal line electrically connected to the other one of the source and the drain of the fifth transistor; and

a sixth signal line electrically connected to the other one of the source and the drain of the sixth transistor.

19. The semiconductor device according to claim 17, further comprising:

a pixel portion,

wherein the driver circuit is a signal line driver electrically connected to the pixel portion.

20. The semiconductor device according to claim 19, further comprising:

a scanning line driver circuit electrically connected to the pixel portion.

21. The semiconductor device according to claim 20, further comprising:

a second scanning line driver circuit electrically connected to the pixel portion,

wherein the pixel portion is provided between the scanning line driver circuit and the second scanning line driver circuit.

22. The semiconductor device according to claim 20, wherein the scanning line driver circuit comprises a thin film transistor comprising a channel formation region comprising an oxide semiconductor including indium.

23. The semiconductor device according to claim 17, wherein the first transistor comprises:

a source electrode and a drain electrode;

a first metal oxide layer between the channel formation region and the source electrode; and

a second metal oxide layer between the channel formation region and the drain electrode.

24. The semiconductor device according to claim 17, wherein the oxide semiconductor of each of the first to the sixth transistor further comprises gallium and zinc.