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VOLTAGE GENERATOR TO COMPENSATE SENSE AMPLIFIER TRIP POINT OVER TEMPERATURE IN NON-VOLATILE MEMORY

  • US 20110116320A1
  • Filed: 11/13/2009
  • Published: 05/19/2011
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
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1. Circuitry for use in a non-volatile storage system, comprising:

  • a current mirror circuit comprising a reference current path and a mirror current path, the reference current path receives a reference current which is mirrored in the minor current path;

    a first transistor in the minor current path, the first transistor is matched to a voltage-setting transistor (NHLL) in at least one sense amplifier, and the mirror current path provides a voltage to the voltage-setting transistor, in response to which the voltage-setting transistor sets an initial voltage at a sense node in the at least one sense amplifier at a start of a sensing period;

    a resistor connected in series with the current minor circuit; and

    a second transistor connected in series with the current minor circuit, the second transistor is matched to a voltage-sensing transistor (NSEN) in the at least one sense amplifier, the voltage-sensing transistor senses a final voltage at the sense node at the end of the sensing period.

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