ETCHING PIEZOELECTRIC MATERIAL
First Claim
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1. A method comprising:
- shaping a piezoelectric material by exposing the material to plasma etching conditions andetching a feature having a depth of about 1 micron or more.
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Abstract
Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.
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Citations
31 Claims
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1. A method comprising:
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shaping a piezoelectric material by exposing the material to plasma etching conditions and etching a feature having a depth of about 1 micron or more. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method comprising:
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shaping a piezoelectric material by exposing the material to plasma etching conditions, etching a feature having an aspect ratio of about 2 to 1 or more, and forming an island having an edge shape other than a square or a rectangle. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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19. An assembly, comprising:
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a piezoelectric material with a thickness of about 5 to 25 microns, and a masking material having a pattern feature defining the location of said piezoelectric feature, the masking material having a thickness of about 20 micron or less and the mask pattern feature having an aspect ratio of about 10 to 1 or less.
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27. A method of processing piezoelectric material, comprising:
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providing a piezoelectric substrate, depositing a masking material on a surface of the substrate, patterning the masking material to form a mask pattern using a wet etch, transferring the patterning of the mask to the piezoelectric substrate to form piezoelectric features using a plasma etch, and stripping the mask material using a wet etch. - View Dependent Claims (28, 29, 30, 31)
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Specification