SEMICONDUCTOR SENSOR AND MANUFACTURING METHOD OF SENSOR BODY FOR SEMICONDUCTOR SENSOR

• US 20110117689A1
• Filed: 01/24/2011
• Published: 05/19/2011
• Est. Priority Date: 12/20/2005
• Status: Active Grant

• Current Assignee: Hokuriku Electric Industry Company Limited
• Original Assignee: Hokuriku Electric Industry Company Limited
• Inventors: Sawai, Tsutomu, Komori, Kazuya
• Granted Patent: US 8,173,472 B2
• Time in Patent Office: Days
• US Class Current: 438/50
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

A semiconductor sensor of which the thickness may be reduced and a method of manufacturing a sensor body for the semiconductor sensor are provided. A total length L1 of a weight portion 5 and an additional weight portion 3 as measured in an extending direction of a centerline C is determined to be shorter than a length L2 of a support portion 7 as measured in the extending direction of the centerline C. The weight portion 5 and the additional weight portion 3 are received within a space 15 defined, being surrounded by the support portion 7. Then, dimensions and shapes of the weight portion 5 and the additional weight portion 3 are determined to allow the weight portion 5 and the additional weight portion 3 to move within the space 15.

Claims

1-3. -3. (canceled)

4. A method of manufacturing a sensor body for a semiconductor sensor by etching a semiconductor substrate, the sensor body including a weight portion disposed in a central portion thereof, a cylindrical support portion disposed in an outer peripheral portion thereof, and a diaphragm portion disposed between the weight portion and the support portion, the method comprising:

forming an insulating layer on one surface of the semiconductor substrate;

coating the insulating layer with a photosensitive resist, thereby forming a first unphotosensitized resist layer;

irradiating ultraviolet light onto the first unphotosensitized resist layer through a photomask and then developing the irradiated first unphotosensitized resist layer, thereby forming on the one surface of the semiconductor substrate a first resist layer having a first etching opening of a predetermined shape, the first resist layer covering a portion where the support portion is to be formed;

etching the insulating layer through the first etching opening to remove a portion of the insulating layer that corresponds to the first etching opening, thereby forming a second etching opening in the insulating layer;

removing the first resist layer and then applying anisotropic etching to the semiconductor substrate through the second etching opening, thereby forming a concave portion in the semiconductor substrate;

forming a wall surface insulating film on an inner wall surface of the concave portion;

coating the wall surface insulating film and the insulating layer continuous with the wall surface insulating film with a photosensitive resist, thereby forming a second unphotosensitized resist layer;

irradiating ultraviolet light onto the second unphotosensitized resist layer through a photomask and then developing the irradiated second unphotosensitized resist layer, thereby forming a second resist layer of a predetermined shape and a third resist layer, the second resist layer being disposed on a central location of the concave portion, having a smaller area than an area of a bottom surface of the concave portion, and covering a portion where the weight portion is to be formed, the third resist layer covering a portion located around the concave portion, where the support portion is to be formed, the second and third resist layers defining a third etching opening therebetween;

etching the wall surface insulating film through the third etching opening, thereby forming a fourth annular etching opening in the wall surface insulating film; and

removing the second and third resist layers and then applying anisotropic etching to the semiconductor substrate through the fourth etching opening, thereby forming an annular concave portion in a portion of the semiconductor substrate located on a bottom of the concave portion, wherein the diaphragm portion is defined by a portion of the semiconductor substrate corresponding to a bottom surface of the annular concave portion, and the weight portion is defined by the portion of the semiconductor substrate that is left on a central location of the annular concave portion.

5. The method of manufacturing a sensor body for a semiconductor sensor according to claim 4, wherein

the insulating layer is of a two-layered structure comprising a silicon oxide film formed by thermally oxidizing the one surface of the semiconductor substrate and a silicon nitride film formed on the silicon oxide film by thin-film formation technique.

6. The method of manufacturing a sensor body for a semiconductor sensor according to claim 4, wherein

the wall surface insulating film is formed of a silicon nitride film formed by thin-film formation technique.

7. The method of manufacturing a sensor body for a semiconductor sensor according to claim 4, wherein

irradiation of the ultraviolet light performed onto the second unphotosensitized resist layer through the photomask comprises:

a first irradiation step of irradiating the ultraviolet light onto the second unphotosensitized resist layer through a first negative photomask, thereby cross-linking a portion of the second unphotosensitized resist layer where the support portion is to be formed; and

a second irradiation step of irradiating the ultraviolet light onto the second unphotosensitized resist layer through a second negative photomask after or before the first irradiation step, thereby cross-linking a portion of the second unphotosensitized resist layer where the weight portion is to be formed.

8. The method of manufacturing a sensor body for a semiconductor sensor according to claim 4, wherein

the first negative photomask comprises:

a main portion through which the ultraviolet light passes; and

a mask portion that is formed on a central location of an opposing surface of the main portion that faces the second unphotosensitized resist layer so that the ultraviolet light is not irradiated onto portions of the second unphotosensitized resist layer other than a portion of the second unphotosensitized resist layer where the support portion is to be formed; and

the second negative photomask comprises;

a main portion including a base portion that faces the second unphotosensitized resist layer, and a projecting portion shaped to project from the base portion along an inner wall surface of the concave portion, the ultraviolet light passing through the main portion;

a first mask portion annularly formed on an irradiation surface of the base portion onto which the ultraviolet light is to be irradiated; and

a second mask portion annularly formed on a portion of an opposing surface of the projecting portion that faces the second unphotosensitized layer and faces the bottom surface of the concave portion, so that the ultraviolet light that has entered through a portion where the first mask portion is not formed is not irradiated onto portions of the second unphotosensitized portion other than a portion of the second unphotosensitized resist layer where the weight portion is to be formed.

9. The sensor body for a semiconductor sensor manufactured by the manufacturing method according to claim 4.