Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
102 Claims
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1-38. -38. (canceled)
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39. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the step of:
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forming an oxide semiconductor layer including a region to become a channel region of the transistor, wherein the oxide semiconductor layer has crystallinity, and wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (40, 41, 42, 43, 44, 45)
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46. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
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forming an oxide semiconductor layer including a region to become a channel region of the transistor; and forming a pixel electrode in electrical contact with a source or drain of the transistor, wherein the oxide semiconductor layer has crystallinity, and wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (47, 48, 49, 50, 51, 52)
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53. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
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forming a gate electrode over a substrate; forming an insulating film over the gate electrode; and forming an oxide semiconductor layer including a region to become a channel region of the transistor over the gate electrode with the insulating film interposed between the oxide semiconductor layer and the gate electrode, wherein the oxide semiconductor layer has crystallinity, and wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (54, 55, 56, 57, 58, 59)
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60. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the step of:
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forming an oxide semiconductor layer including a region to become a channel region of the transistor, wherein the transistor is a top gate type transistor, wherein the oxide semiconductor layer has crystallinity, and wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (61, 62, 63, 64, 65, 66)
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67. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
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forming an oxide semiconductor layer including a region to become a channel region of the transistor; and heating the oxide semiconductor layer to increase crystallinity of at least the region to become a channel region, wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (68, 69, 70, 71, 72, 73, 74, 75)
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76. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
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forming an oxide semiconductor layer including a region to become a channel region of the transistor; heating the oxide semiconductor layer to increase crystallinity of at least the region to become a channel region; and forming a pixel electrode in electrical contact with a source or drain of the transistor, wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (77, 78, 79, 80, 81, 82, 83, 84)
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85. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
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forming a gate electrode over a substrate; forming an insulating film over the gate electrode; forming an oxide semiconductor layer including a region to become a channel region of the transistor over the gate electrode with the insulating film interposed between the oxide semiconductor layer and the gate electrode; and heating the oxide semiconductor layer to increase crystallinity of at least the region to become a channel region, wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (86, 87, 88, 89, 90, 91, 92, 93)
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94. A method of manufacturing a semiconductor device comprising a transistor, the method comprising the steps of:
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forming an oxide semiconductor layer including a region to become a channel region of the transistor; and heating the oxide semiconductor layer to increase crystallinity of at least the region to become a channel region, wherein the transistor is a top gate type transistor, and wherein the region to become a channel region is substantially intrinsic. - View Dependent Claims (95, 96, 97, 98, 99, 100, 101, 102)
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Specification