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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110117698A1
  • Filed: 01/25/2011
  • Published: 05/19/2011
  • Est. Priority Date: 10/22/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a semiconductor layer comprising an oxide semiconductor including indium;

    processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer; and

    processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer.

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