METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer comprising an oxide semiconductor including indium;
processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer; and
processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer.
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Abstract
An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.
213 Citations
44 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor layer comprising an oxide semiconductor including indium; processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer; and processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode; forming a gate insulating layer over the gate electrode; forming a semiconductor layer comprising an oxide semiconductor including indium over the gate insulating layer; processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer; forming a conductive layer over the island-shaped semiconductor layer; processing the conductive layer by dry etching to form a first conductive layer and a second conductive layer; and processing the island-shaped semiconductor layer by second dry etching to form a recessed portion in the island-shaped semiconductor layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode; forming a gate insulating layer over the gate electrode; forming a semiconductor layer comprising an oxide semiconductor including indium over the gate insulating layer; processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer; forming a conductive layer over the island-shaped semiconductor layer; processing the conductive layer by dry etching to form a first conductive layer and a second conductive layer; and processing the island-shaped semiconductor layer by the dry etching to form a recessed portion in the island-shaped semiconductor layer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode; forming a gate insulating layer over the gate electrode; forming a first semiconductor layer comprising an oxide semiconductor including indium over the gate insulating layer; forming a second semiconductor layer over the first semiconductor layer; processing the first semiconductor layer and the second semiconductor layer by wet etching to form a first island-shaped semiconductor layer and a second island-shaped semiconductor layer over the first island-shaped semiconductor layer; forming a conductive layer over the second island-shaped semiconductor layer; processing the conductive layer by first dry etching to form a first conductive layer and a second conductive layer; and processing the first island-shaped semiconductor layer and the second island-shaped semiconductor layer by second dry etching to form a recessed portion in the first island-shaped semiconductor layer. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35)
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36. A method for manufacturing a semiconductor device comprising:
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forming a gate electrode; forming a gate insulating layer over the gate electrode; forming a first semiconductor layer comprising an oxide semiconductor including indium over the gate insulating layer; forming a second semiconductor layer over the first semiconductor layer; processing the first semiconductor layer and the second semiconductor layer by wet etching to form a first island-shaped semiconductor layer and a second island-shaped semiconductor layer over the first island-shaped semiconductor layer; forming a conductive layer over the second island-shaped semiconductor layer; processing the conductive layer by dry etching to form a first conductive layer and a second conductive layer; and processing the first island-shaped semiconductor layer and the second island-shaped semiconductor layer by the dry etching to form a recessed portion in the first island-shaped semiconductor layer. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44)
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Specification